P12PF06 STMicroelectronics, P12PF06 Datasheet

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P12PF06

Manufacturer Part Number
P12PF06
Description
Search -----> STP12PF06
Manufacturer
STMicroelectronics
Datasheet

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Part Number:
P12PF06
Manufacturer:
ST
0
www.DataSheet4U.com
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics
Size ” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
May 2000
STP12PF06
Symb ol
CHARACTERIZATIONL
I
TYPICAL R
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE
APPLICATION ORIENTED
MOTOR CONTROL
DC-DC & DC-AC CONVERTERS
V
dv/dt
DM
V
V
T
P
DGR
I
I
T
TYPE
GS
st g
DS
D
D
tot
( )
j
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating F actor
Peak Diode Recovery voltage slope
Storage T emperature
Max. Operating Junction Temperature
DS(on)
V
60 V
DSS
= 0.18
unique
< 0.20
R
P - CHANNEL 60V - 0.18
Parameter
DS(o n)
c
”Single
GS
= 25
GS
= 20 k )
= 0)
o
C
c
c
12 A
Feature
= 25
= 100
I
D
o
C
o
STripFET
C
(
1
) I
SD
INTERNAL SCHEMATIC DIAGRAM
12 A, di/dt
300 A/ s, V
POWER MOSFET
-65 to 175
Value
175
8.4
0.4
60
60
12
48
60
TO-220
6
20
- 12A TO-220
DD
STP12PF06
V
(BR)DSS
1
2
, T
3
j
T
JMAX
W /
Unit
V/ns
o
o
W
V
V
V
A
A
A
C
C
o
C
1/8

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P12PF06 Summary of contents

Page 1

... STripFET < 0. 0.18 unique ”Single Feature Parameter = 100 STP12PF06 - 12A TO-220 POWER MOSFET TO-220 INTERNAL SCHEMATIC DIAGRAM Value 8 0.4 6 -65 to 175 175 ) di/dt 300 (BR)DSS j Unit ...

Page 2

... STP12PF06 THERMAL DATA R Thermal Resistance Junction-case thj -case R Thermal Resistance Junction-ambient thj -amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature F or Soldering Purpose l AVALANCHE CHARACTERISTICS Symbo l I Avalanche Current, Repetitive or Not-Repetitive AR www.DataSheet4U.com (pulse width limited Single Pulse Avalanche Energy AS (starting T ...

Page 3

... Load, see fig. 5) Test Con ditions di/dt = 100 150 (see test circuit, fig. 5) Thermal Impedance STP12PF06 Min. Typ. Max. Unit Min. Typ. Max. Unit 40 ns ...

Page 4

... STP12PF06 Output Characteristics www.DataSheet4U.com Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Threshold Voltage vs Temperature www.DataSheet4U.com Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature STP12PF06 5/8 ...

Page 6

... STP12PF06 Fig. 1: Unclamped Inductive Load Test Circuit www.DataSheet4U.com Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... MAX. 4.40 4.60 1.23 1.32 2.40 2.72 1.27 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.4 2.7 10.0 10.40 16.4 13.0 14.0 2.65 2.95 15.75 6.2 6.6 3.5 3.93 3.75 3.85 L2 Dia STP12PF06 inch MIN. TYP. 0.173 0.048 0.094 0.050 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.511 0.104 0.600 0.244 0.137 0.147 L9 L4 P011C MAX. 0.181 0.051 0.107 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.551 0.116 0.620 ...

Page 8

... STP12PF06 www.DataSheet4U.com Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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