P10NK60ZFP STMicroelectronics, P10NK60ZFP Datasheet - Page 5
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P10NK60ZFP
Manufacturer Part Number
P10NK60ZFP
Description
Search -----> STP10NK60ZFP
Manufacturer
STMicroelectronics
Datasheet
1.P10NK60ZFP.pdf
(19 pages)
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Table 8.
(1) I
(2) Pulse width limited by safe operating area
(3) Limited only by maximum temperature allowed
(4) Pulsed: pulse duration = 300µs, duty cycle 1.5%
(5) C
I
V
SDM
Symbol
SD
SD
to 80%
oss eq.
I
RRM
I
Q
Note
SD
Note
t
rr
10A, di/dt 200A/µs, V
rr
is defined as a constant equivalent capacitance giving the same charging time as C
4
2
Source drain diode
Source-drain Current
Source-drain Current (pulsed)
Forward on Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
DD
V
(BR)DSS
, T
j
T
JMAX
I
I
V
SD
SD
DD
=10A, V
=8A, di/dt = 100A/µs,
=40 V, Tj=150°C
Test Conditions
GS
=0
Min.
oss
when V
2 Electrical characteristics
Typ.
570
4.3
15
DS
increases from 0
Max.
1.6
10
36
Unit
µC
ns
A
A
V
A
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