STGW50NB60M ST Microelectronics, STGW50NB60M Datasheet - Page 2

• Manufacturer Part Number: STGW50NB60M
• Description: N-CHANNEL 50A - 600V - TO-247 PowerMESH IGBT
• Manufacturer: ST Microelectronics

STGW50NB60M
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
OFF
ON (1)
DYNAMIC
SWITCHING ON
2/9
Rthj-case
Rthj-amb
V
Symbol
Symbol
Symbol
Symbol
(di/dt)
V
V
Rthc-h
BR(CES)
t
I
CE(sat)
C
I
GE(th)
C
C
Eon
Q
Q
d(on)
CES
GES
I
g
Q
CL
oes
t
res
ies
fs
ge
gc
r
g
on
Collector-Emitter Breakdown
Voltage
Collector cut-off
(V
Gate-Emitter Leakage
Current (V
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Latching Current
Turn-on Delay Time
Rise Time
Turn-on Current Slope
Turn-on Switching Losses
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-heatsink Typ
GE
= 0)
Parameter
Parameter
Parameter
Parameter
CE
= 0)
CASE
I
V
V
V
V
V
V
V
V
V
V
V
V
R
V
R
V
R
Tj = 125°C
V
C
CE
CE
GE
CE
GE
GE
GE
GE
CE
CE
GE
clamp
CC
CC
G
G
G
CE
= 250 µA, V
=10
= 25 °C UNLESS OTHERWISE SPECIFIED)
= 10
= 10
= 480 V, I
= Max Rating, T
= Max Rating, T
= V
= 15 V
= 480 V, I
= ± 20 V , V
= 15V, I
= 15V, I
= 15V, I
= 15V, I
= 15 V
= 480 V, I
= 25 V, f = 1 MHz, V
= 480 V , Tj = 125°C
Test Conditions
Test Conditions
Test Conditions
Test Conditions
GE
, V
, I
V
,
C
C
C
C
GE
C
I
GE
C
C
C
C
= 30 A @25°C
= 30 A @100°C
= 50 A @25°C
= 50 A @100°C
GE
= 250 µA
= 18 A
= 50 A
= 15 V
= 50 A,
= 50 A
= 15 V
CE
= 0
= 0
C
C
= 25 °C
= 125 °C
GE
= 0
Min.
Min.
Min.
Min.
600
300
3
0.1
0.5
30
1600
Typ.
800
4500
Typ.
Typ.
1.35
Typ.
45
30
400
231
1.3
1.2
1.5
22
70
28
97
4
Max.
± 100
Max.
Max.
Max.
100
1.9
10
5
°C/W
°C/W
°C/W
Unit
A/µs
Unit
Unit
Unit
µJ
ns
ns
nC
nC
nC
µA
µA
nA
pF
pF
pF
V
V
V
V
V
V
S
A