APTM120VDA57T3G Microsemi Corporation, APTM120VDA57T3G Datasheet - Page 7

• Manufacturer Part Number: APTM120VDA57T3G
• Description: Dual Boost Chopper Mosfet Power Module
• Manufacturer: Microsemi Corporation

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Typical chopper diode performance curve
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
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200
160
120
1.4
1.2
0.8
0.6
0.4
0.2
80
40
80
60
40
20
0.00001
4
3
2
1
0
0
0
1
0
0.0
0
1
T
V
Forward Current vs Forward Voltage
J
Capacitance vs. Reverse Voltage
R
=125°C
=800V
0.05
V
0.9
0.7
0.5
0.3
0.1
200
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
F
QRR vs. Current Rate Charge
, Anode to Cathode Voltage (V)
V
1.0
R
, Reverse Voltage (V)
400
10
-di
0.0001
T
J
=125°C
F
/dt (A/µs)
600
2.0
100
T
800
J
=25°C
45 A
3.0
1000 1200
0.001
15 A
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30 A
Rectangular Pulse Duration (Seconds)
1000
4.0
Single Pulse
0.01
Max. Average Forward Current vs. Case Temp.
APTM120VDA57T3G
50
40
30
20
10
500
400
300
200
100
0
30
25
20
15
10
5
0
25
0
0
0
T
V
0.1
J
R
Trr vs. Current Rate of Charge
=125°C
IRRM vs. Current Rate of Charge
=800V
50
200
200
45 A
Case Temperature (ºC)
75
400
400
-di
-di
F
F
/dt (A/µs)
/dt (A/µs)
100
600
600
1
Duty Cycle = 0.5
125
800 1000 1200
800
T
J
=175°C
T
V
J
R
=125°C
=800V
1000 1200
150
30 A
45 A
30 A
15 A
15 A
10
175
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