APTM120VDA57T3G Microsemi Corporation, APTM120VDA57T3G Datasheet - Page 4

• Manufacturer Part Number: APTM120VDA57T3G
• Description: Dual Boost Chopper Mosfet Power Module
• Manufacturer: Microsemi Corporation

Typical MOSFET Performance Curve
0.35
0.25
0.15
0.05
1.4
1.3
1.2
1.1
0.9
0.8
50
40
30
20
10
0.3
0.2
0.1
0
0.00001
1
0
0
0
Low Voltage Output Characteristics
Normalized to
V
GS
V
0.05
=10V @ 8.5A
0.5
0.7
DS
0.9
0.3
0.1
5
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
, Drain to Source Voltage (V)
R
10
DS(on)
I
D
, Drain Current (A)
V
10
GS
vs Drain Current
0.0001
=15, 10 & 8V
15
20
V
GS
=10V
20
V
30
GS
0.001
=20V
rectangular Pulse Duration (Seconds)
25
7V
5.5V
6.5V
6V
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5V
30
40
Single Pulse
0.01
APTM120VDA57T3G
20
16
12
80
70
60
50
40
30
20
10
8
4
0
0
25
0
DC Drain Current vs Case Temperature
V
250µs pulse test @ < 0.5 duty cycle
DS
0.1
1
V
> I
GS
D
T
(on)xR
50
Transfert Characteristics
, Gate to Source Voltage (V)
C
2
, Case Temperature (°C)
T
DS
J
=125°C
(on)MAX
3
T
75
J
=25°C
4
1
5
100
6
T
J
=-55°C
125
7
8
10
150
9
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