APTM10DHM09T3G Microsemi Corporation, APTM10DHM09T3G Datasheet - Page 6

• Manufacturer Part Number: APTM10DHM09T3G
• Description: Asymmetrical - Bridge Mosfet Power Module
• Manufacturer: Microsemi Corporation

120
100
300
250
200
150
100
80
60
40
20
50
0
1.5
0.5
0
25
1
0
0
Operating Frequency vs Drain Current
V
R
T
L=100µH
0
J
DS
G
=125°C
=5Ω
V
R
T
L=100µH
=66V
Switching Energy vs Current
J
DS
G
=125°C
=5Ω
=66V
50
50
Delay Times vs Current
E
50
I
D
on
I
I
D
, Drain Current (A)
D
, Drain Current (A)
, Drain Current (A)
switching
100
Hard
75
100
150
100
150
t
d(off)
E
ZVS
t
V
D=50%
R
T
T
off
d(on)
J
C
DS
G
200
=125°C
ZCS
125
200
=75°C
=5Ω
E
=66V
on
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250
250
150
1000
APTM10DHM09T3G
100
160
140
120
100
2.5
1.5
0.5
10
80
60
40
20
1
2
1
0
0
0.3
Switching Energy vs Gate Resistance
0
0
Source to Drain Diode Forward Voltage
V
I
T
L=100µH
V
R
T
L=100µH
D
DS
J
DS
J
=139A
V
G
=125°C
=125°C
=5Ω
SD
Rise and Fall times vs Current
=66V
=66V
0.5
10
, Source to Drain Voltage (V)
50
Gate Resistance (Ohms)
T
I
J
D
=150°C
0.7
, Drain Current (A)
20
100
T
0.9
30
J
=25°C
150
E
off
1.1
40
t
t
r
f
200
E
1.3
on
50
250
1.5
60
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