APTM10DHM09T3G Microsemi Corporation, APTM10DHM09T3G Datasheet

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APTM10DHM09T3G

Manufacturer Part Number
APTM10DHM09T3G
Description
Asymmetrical - Bridge Mosfet Power Module
Manufacturer
Microsemi Corporation
Datasheet
Absolute maximum ratings
All multiple inputs and outputs must be shorted together
Symbol
R
V
MOSFET Power Module
V
E
E
I
I
P
I
DSon
DM
AR
DSS
AR
AS
D
GS
D
Asymmetrical - Bridge
18
19
29
30
31
32
Example: 13/14 ; 29/30 ; 22/23 …
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
28 27 26
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
2
15
29
Q1
3
25
4
CR2
30
22
23
13
23 22
14
7
7
8
31
CR3
8
R1
20
Q4
Parameter
19
10
32
11 12
18
16
16
15
14
13
4
3
www.microsemi.com
Application
Features
Benefits
T
T
T
V
R
I
c
c
c
= 25°C
= 80°C
= 25°C
D
DSS
DSon
APTM10DHM09T3G
Welding converters
Switched Mode Power Supplies
Switched Reluctance Motor Drives
Power MOS V
Kelvin source for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
= 139A @ Tc = 25°C
-
= 100V
-
-
-
-
-
Symmetrical design
= 9mΩ typ @ Tj = 25°C
Max ratings
Low R
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
3000
100
139
100
430
±30
390
100
10
50
®
DSon
MOSFETs
Unit
mJ
W
V
A
V
A
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APTM10DHM09T3G Summary of contents

Page 1

... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM10DHM09T3G V = 100V DSS R = 9mΩ typ @ Tj = 25°C DSon I = 139A @ Tc = 25°C D Application • ...

Page 2

... V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTM10DHM09T3G = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 100V 125° 0V,V = 80V GS DS ...

Page 3

... R ⎡ T exp ⎢ B ⎢ ⎣ (dimensions in mm) SP3 Package outline 28 1 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTM10DHM09T3G MOSFET To heatsink T =100° Thermistor temperature 25 ⎤ ⎛ ⎞ Thermistor value ⎜ ⎜ ⎟ ⎟ ...

Page 4

... V , Drain to Source Voltage ( Drain Current DS(on) 1.2 Normalized to V =10V @ 69.5A GS 1.1 1 0.9 0 100 I , Drain Current (A) D APTM10DHM09T3G Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 120 V DS 100 250µs pulse test @ < 0.5 duty cycle Drain Current vs Case Temperature ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss Crss 1000 100 Drain to Source Voltage (V) DS APTM10DHM09T3G ON resistance vs Temperature 2.5 V =10V 69.5A 2.0 D 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 1000 ...

Page 6

... G 200 T =125° =75°C C 150 ZVS 100 ZCS Hard switching 100 125 I , Drain Current (A) D APTM10DHM09T3G Rise and Fall times vs Current 160 V =66V DS 140 R =5Ω =125°C 120 J L=100µH 100 250 0 50 100 ...

Page 7

... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM10DHM09T3G Single Pulse 0.001 ...

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