IS61C64AL Integrated Silicon Solution, Inc., IS61C64AL Datasheet - Page 3
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IS61C64AL
Manufacturer Part Number
IS61C64AL
Description
8k X 8 High-speed Cmos Static Ram
Manufacturer
Integrated Silicon Solution, Inc.
Datasheet
1.IS61C64AL.pdf
(13 pages)
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ABSOLUTE MAXIMUM RATINGS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
IS61C64AL
OPERATING RANGE
Note:
1. If operated at 12ns, V
DC ELECTRICAL CHARACTERISTICS
Note:
1. V
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
10/23/06
Symbol
V
T
P
I
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
Range
Commercial
Industrial
Symbol Parameter
V
V
V
V
I
I
OUT
LI
LO
IL
STG
TERM
T
OH
OL
IH
IL
= –3.0V for pulse width less than 10 ns.
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Ambient Temperature
–40°C to +85°C
DD
0°C to +70°C
range is 5V + 10%.
(1)
Test Conditions
V
V
GND ≤ V
GND ≤ V
Outputs Disabled
DD
DD
(1)
= Min., I
= Min., I
Speed
(Over Operating Range)
-10
-10
OUT
IN
≤ V
OH
OL
≤ V
= 8.0 mA
= –4.0 mA
DD
DD
–0.5 to +7.0
–65 to +150
,
Value
5V ± 5%
5V ± 5%
1.5
20
V
DD
(1)
Unit
mA
°C
W
V
Com.
Com.
Ind.
Ind.
Min.
–0.3
2.4
2.2
–1
–2
–1
–2
—
V
DD
Max.
0.4
0.8
—
ISSI
1
2
1
2
+ 0.5
Unit
µA
µA
V
V
V
V
®
3
1
2
3
4
5
6
7
8
9
10
11
12