TA8270HQ TOSHIBA Semiconductor CORPORATION, TA8270HQ Datasheet - Page 8

• Manufacturer Part Number: TA8270HQ
• Description: Max Power 43 W Btl ? 4 Ch High Efficiency Audio Power Ic
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Absolute Maximum Ratings
be exceeded during operation, even for an instant. If any of these rating would be exceeded during operation, the
device electrical characteristics may be irreparably altered and the reliability and lifetime of the device can no
longer be guaranteed. Moreover, these operations with exceeded ratings may cause break down, damage and/or
degradation to any other equipment. Applications using the device should be designed such that each absolute
maximum rating will never be exceeded in any operating conditions. Before using, creating and/or producing
designs, refer to and comply with the precautions and conditions set forth in this documents.
Electrical Characteristics
(unless otherwise specified, V
The absolute maximum ratings of a semiconductor device are a set of specified parameter values, which must not
Peak supply voltage (0.2 s)
DC supply voltage
Operation supply voltage
Output current (peak)
Power dissipation
Operation temperature
Storage temperature
Note 5: Package thermal resistance θ
Quiescent current
Output power
Total harmonic distortion
Voltage gain
Voltage gain ratio
Output noise voltage
Ripple rejection ratio
Cross talk
Output offset voltage
Input resistance
Stand-by current
Stand-by control voltage
Mute control voltage
Mute attenuation
Note 6: Muting function have to be controlled by open and low logic, which logic is a transistor, FET and µ-COM port
(Ta = 25°C, with infinite heat sink)
of I
Characteristics
Characteristics
MUTE
> 250
µ
A ability.This means than the mute control terminal : pin 22 must not be pulled-up.
(Note 6)
P
P
CC
(Ta = 25°C)
V
P
OUT
OUT
V
V
P
P
V
I
CC (surge)
D
V
V
Symbol
Symbol
O (peak)
ATT M
j-T
OFFSET
V
CC (DC)
CC (opr)
OUT
OUT
V
V
I
NO
NO
V
THD
∆G
R.R.
T
T
= 13.2 V, f = 1 kHz, R
C.T.
(Note5)
CCQ
R
SB
G
I
SB
M
SB
M
MAX (1)
MAX (2)
opr
stg
IN
= 1°C/W (typ.)
V
V
H
(1)
(2)
L
H
(1)
(2)
L
Circuit
Test
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
−55~150
−40~85
Rating
125
50
25
16
9
8
V
V
V
V
THD = 10%
P
V
V
Rg = 0 Ω, DIN45405
Rg = 0 Ω, BW = 20 Hz~20 kHz
f
V
Rg = 620 Ω
V
Stand-by condition
Power: ON
Power: OFF
Mute: OFF
Mute: ON, R
Mute: ON,
V
Mute: OFF.
rip
IN
CC
CC
CC
OUT
OUT
OUT
rip
OUT
OUT
= 100 Hz, Rg = 620 Ω
= 0
= 0.775 V
= 14.4 V, max Power
= 13.7 V, max Power
= 14.4 V, THD = 10%
= 2 W
= 0.775 Vrms (0dBm)
= 0.775 Vrms (0dBm)
= 0.775 Vrms (0dBm)
= 7.75 Vrms (20dBm) at
Test Condition
L
Unit
1
°C
°C
= 4
W
V
V
V
A
rms
= 10 kΩ
⎯
⎯
(0dBm)
Ω
, Ta = 25°C)
−150
−1.0
Min
3.0
22
24
40
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0
0
Open
Typ.
0.04
0.15
0.13
200
43
40
28
24
26
50
65
90
90
⎯
⎯
⎯
0
0
2
TA8270HQ
2006-04-28
Max
0.35
V
400
150
0.2
1.0
1.5
0.5
28
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
CC
mVrms
Unit
mA
mV
dB
dB
dB
kΩ
µA
dB
⎯
W
%
V
V