TA8270HQ TOSHIBA Semiconductor CORPORATION, TA8270HQ Datasheet

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TA8270HQ

Manufacturer Part Number
TA8270HQ
Description
Max Power 43 W Btl ? 4 Ch High Efficiency Audio Power Ic
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
Max Power 43 W BTL × 4 ch High Efficiency Audio Power IC
high efficiency audio amplifier for car audio applications.
rejection and then it is possible to design for limited small DIN
size chassis.
class AB solutions.
lower internal temperature into the car audio set; internal
cassette part, CD/MD part etc.
as it is included the pure complementary PNP and NPN transistor output stage.
offset voltage detection for car audio use are built-in.
Features
The TA8270HQ is TOSHIBA original class KB (Keyed BTL)
The Class KB solutions is no need an external LPF for EMI
Conversely, the class D must need an external LPF.
Power dissipation of class KB is no more than a half of the
Therefore, it is possible to design a smaller heatsink and keep
This IC can generate more high power and high quality sounds
Additionally, stand-by function, mute function, various kind of protector and diagnosis function included output
Note 1: Install the product correctly. Otherwise, it may result in break down, damage and/or degradation to the
Note 2: These protection functions are intended to avoid some output short circuits or other abnormal conditions
High power : P
Built-in diagnosis circuit (pin 25)
Low distortion ratio: THD = 0.04% (typ.)
Low noise: V
Built-in stand-by switch (pin 4)
Built-in muting function (pin 22)
Built-in various protection circuit
Operating supply voltage: V
: Thermal shut down, over voltage, out to GND, out to V
product or equipment.
temporarily. These protect functions do not warrant to prevent the IC from being damaged.
- In case of the product would be operated with exceeded guaranteed operating ranges, these
protection features may not operate and some output short circuits may result in the IC being
damaged.
(V
: P
: P
: P
NO
CC
(V
(V
(V
(V
OUT
OUT
OUT
OUT
CC
CC
CC
CC
= 0.13 mV
= 13.2 V, R
MAX (1) = 43 W (typ.)
= 14.4 V, f = 1 kHz, JEITA max, R
= 13.7 V, f = 1 kHz, JEITA max, R
= 14.4 V, f = 1 kHz, THD = 10%, R
= 13.2 V, f = 1 kHz, THD = 10%, R
MAX (2) = 40 W (typ.)
(1) = 28 W (typ.)
(2) = 24 W (typ.)
(V
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
CC
rms
= 13.2 V, f = 1 kHz, P
g
CC (opr)
= 0 Ω, G
(typ.)
= 9~16 V
V
TA8270HQ
= 26dB, BW = 20 Hz~20 kHz)
OUT
L
L
= 2 W, R
L
L
1
= 4 Ω)
= 4 Ω)
= 4 Ω)
= 4 Ω)
CC
L
, out to out short
= 4 Ω)
Weight: 7.7 g (typ.)
TA8270HQ
2006-04-28

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TA8270HQ Summary of contents

Page 1

... TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic Max Power 43 W BTL × High Efficiency Audio Power IC The TA8270HQ is TOSHIBA original class KB (Keyed BTL) high efficiency audio amplifier for car audio applications. The Class KB solutions is no need an external LPF for EMI rejection and then it is possible to design for limited small DIN size chassis ...

Page 2

... V V CC1 CC2 OUT1 (+) 9 IN1 PW-GND1 8 OUT1 (−) 7 OUT2 (+) 5 IN2 PW-GND2 2 OUT2 (−) 3 CENTER 16 OUT3 (+) 17 IN3 PW-GND3 18 OUT3 (−) 19 OUT4 (+) 21 IN4 PW-GND4 24 OUT4 (−) 23 DIAGNOSIS RIP STBY MUTE OUT TA8270HQ PRE-GND : PW-GND 2006-04-28 ...

Page 3

... Since the control current is microscopic, the switching relay of small current capacity is satisfactory for switching Amp. 2A Amp. 1 Amp. 2B Figure 1 Block Diagram = 0dB 20dB 6dB V (BTL 26dB ON Power OFF SB V (V) SB 0~1.5 Figure 2 With pin 4 set to High, 3 TA8270HQ kΩ 4 ≈ BIAS CUTTING CIRCUIT Power is turned ON 2006-04-28 ...

Page 4

... A 0 −20 −40 −60 −80 −100 0 0.4 0.8 1 1.2 Point A voltage: V MUTE (V) MUTE Figure 5 Mute Attenuation − TA8270HQ BATTERY FROM MICROCOMPUTER BATTERY CC > 250 MUTE ATT – V MUTE 10 kΩ 5 kΩ 13 Ω kHz BW = 400~30 kHz 1 ...

Page 5

... NPN transistor. (Q1) is turned on and off in response to the input signal voltage. CENTER PW-GND Figure 6 CENTER Offset Det. Clip Det GND /GND or Over Voltage Power Supplied (typ.) CC LED/LCD (Flashing) (Announcement from a speaker.) ALARM REGULATOR → OFF Figure 8 Application 1 5 TA8270HQ 16 Center amp Short Det. t (Relay → OFF) 2006-04-28 ...

Page 6

... Figure 9 Application and Detection Mechanism (−) Amp Output GND Voltage of point (A) GND Voltage of point (B) GND Offset voltage (at leak − L.P. Figure 10 Wave Form 6 TA8270HQ DC voltagae of (+) Amp (at leak) V (Normal DC voltage) CC/2 DC voltage of (−) Amp (at leak) To CPU B V CC/2 Thereshold level 2006-04-28 ...

Page 7

... Volume control circuit L.P.F Smoothing Circuit Q1 Tone control circuit Figure 11 (A) t (B) t Output offset voltage detecting term (C) Clip detecting term t Note: Actualy, the waveform is solid line because the output offset voltage detection, which is a kind of the self diagnosis, has priority. 7 TA8270HQ 2006-04-28 ...

Page 8

... V L Power: OFF SB ⎯ Mute: OFF M ⎯ kΩ Mute: ON Mute: ON, ⎯ = 7.75 Vrms (20dBm) at ATT M V OUT Mute: OFF. 8 TA8270HQ Min Typ. Max Unit ⎯ 200 400 mA ⎯ ⎯ 43 ⎯ ⎯ ⎯ ⎯ 28 ⎯ ⎯ 0.04 ...

Page 9

... V V CC1 CC2 OUT1 (+) 9 IN1 PW-GND1 8 OUT1 (−) 7 OUT2 (+) 5 IN2 PW-GND2 2 OUT2 (−) 3 CENTER 16 OUT3 (+) 17 IN3 PW-GND3 18 OUT3 (−) 19 OUT4 (+) 21 IN4 PW-GND4 24 OUT4 (−) 23 DIAGNOSIS RIP STBY MUTE OUT TA8270HQ PRE-GND : PW-GND 2006-04-28 ...

Page 10

... T.H.D – P OUT 100 kHz Ω all channel drives kHz 0.1 100 kHz 0.01 100 0.1 1 Output power P T.H.D – P OUT 100 Ω all channel drives 10 1 0.1 0.01 100 0.1 1 Output power P 10 TA8270HQ (OUT2/4) 1 kHz 10 100 (W) OUT (OUT2/4) 9.0 V 16 100 (W) OUT 2006-04-28 ...

Page 11

... C.T. – f (OUT4) 0 −10 −20 −30 −40 −50 OUT4 → OUT1 −60 −70 100000 10 100 Frequency (Hz) 11 TA8270HQ OUT113 OUT2/4 1000 10000 100000 13 Ω V OUT = 0dBm 620 Ω 1000 10000 100000 13 Ω V OUT = 0dBm 620 Ω ...

Page 12

... 620 Ω V rip = 0dBm −20 −30 −40 50 −60 −70 100000 10 100 Frequency (Hz kHz Ω drive 100000 0.1 1 Output power P 150 12 TA8270HQ R.R. – f 1000 10000 100000 – OUT 100 /ch (W) OUT 2006-04-28 ...

Page 13

... Package Dimensions Weight: 7.7 g (typ.) 13 TA8270HQ 2006-04-28 ...

Page 14

... TA8270HQ 2006-04-28 ...

Page 15

... In addition, depending on the IC, the use of silicon rubber may be prohibited. Check whether the use of silicon rubber is prohibited for the IC you intend to use, or not. For details of power IC heat radiation design and heat sink installation, refer to individual technical datasheets or IC databooks. 15 TA8270HQ 2006-04-28 ...

Page 16

... R-type flux (2) Use of Sn-3.0Ag-0.5Cu solder Bath · solder bath temperature = 245°C · dipping time = 5 seconds · the number of times = once · use of R-type flux 021023_D 021023_B 060106_Q 16 TA8270HQ 060116EBF 021023_E 2006-04-28 ...

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