PBYR10100 NXP Semiconductors, PBYR10100 Datasheet - Page 3

• Manufacturer Part Number: PBYR10100
• Description: Rectifier Diodes Schottky Barrier
• Manufacturer: NXP Semiconductors

Philips Semiconductors
March 1998
Rectifier diodes
Schottky barrier
Fig.3. Typical and maximum forward characteristic
square current waveform where I
Fig.1. Maximum forward dissipation P
Fig.2. Maximum forward dissipation P
15
10
10
sinusoidal current waveform where a = form
5
0
8
6
4
2
0
0
0
50
40
30
20
10
PF / W
PF / W
0
Rs = 0.015 Ohms
Rs = 0.015 Ohms
Vo = 0.550 V
Vo = 0.550 V
0
IF / A
Tj = 25 C
Tj = 125 C
2
I
F
factor = I
= f(V
0.1
0.5
5
Typ
4
F
PBYR10100
PBYR10100
4
0.2
); parameter T
IF(AV) / A
IF(AV) / A
F(RMS)
VF / V
2.8
1
I
6
/ I
2.2
0.5
10
F(AV)
Max
t
F(AV)
p
1.9
PBYR10100
1.5
.
T
j
8
=I
a = 1.57
D =
D = 1.0
Tmb / C
Tmb / C
F
F(RMS)
F
= f(I
= f(I
t
T
p
t
2
15
10
120
130
140
150
130
134
138
142
146
150
F(AV)
x D.
F(AV)
);
);
3
Fig.6. Transient thermal impedance; Z
Fig.4. Typical reverse leakage current; I
Fig.5. Typical junction capacitance; C
0.01
0.001
100
0.01
0.1
0.1
10
10000
10
1000
1
1
1us
100
0
10
IR / mA
Transient thermal impedance, Zth j-mb (K/W)
150 C
125 C
Tj = 50 C
100 C
75 C
f = 1 MHz; T
1
Cd/ pF
10us
100us
parameter T
pulse width, tp (s)
j
1ms
= 25˚C to 125 ˚C.
VR/ V
50
PBYR10100 series
VR/ V
P
D
10
10ms 100ms
t
j
p
Product specification
T
PBYR10100
PBYR20100CT
D =
PBYR10100
T
t
th j-mb
p
t
1s
d
R
= f(V
= f(V
100
Rev 1.200
100
= f(t
10s
R
);
R
p
);
).