NSM21356DW6 ON Semiconductor, NSM21356DW6 Datasheet - Page 2

• Manufacturer Part Number: NSM21356DW6
• Description: Dual Complementary Transistors
• Manufacturer: ON Semiconductor

1. FR-4 @ Minimum Pad of 1.45 mm
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS - Q1 NPN BRT
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction‐to‐Ambient
Total Device Dissipation,
Derate above 25°C
Thermal Resistance, Junction‐to‐Ambient
Junction and Storage Temperature
Collector‐Base Cutoff Current
Collector‐Emitter Cutoff Current
Emitter‐Base Cutoff Current
Collector‐Base Breakdown Voltage
Collector‐Emitter Breakdown Voltage (Note 2)
DC Current Gain
Collector‐Emitter Saturation Voltage
Output Voltage (on)
Output Voltage (off)
Input Resistor
Resistor Ratio
T
T
(V
(V
(V
(I
(I
(V
(I
(V
(V
A
A
C
C
C
CB
CE
EB
CE
CC
CC
= 25°C
= 25°C
= 10 mA, I
= 2.0 mA, I
= 10 mA, I
= 6.0 V, I
= 50 V, I
= 50 V, I
= 10 V, I
= 5.0 V, V
= 5.0 V, V
E
B
E
B
C
C
B
= 0)
B
B
= 0)
= 0)
= 5.0 mA)
= 0.3 mA)
= 0)
= 0)
= 3.5 V, R
= 0.5 V, R
Characteristic (Both Junctions Heated)
Characteristic (One Junction Heated)
L
L
Characteristic
= 1.0 kW)
= 1.0 kW)
2
, 1 oz Cu.
NSM21356DW6T1G
http://onsemi.com
(T
A
= 25°C unless otherwise noted)
2
V
V
Symbol
V
(BR)CBO
(BR)CEO
R1/R2
I
I
I
CE(sat)
V
V
h
CBO
CEO
EBO
R1
OH
FE
OL
32.9
Min
4.9
0.8
50
50
80
-
-
-
-
-
Symbol
Symbol
T
R
R
J
P
P
, T
qJA
qJA
D
D
stg
Typ
140
1.0
47
-
-
-
-
-
-
-
-
1.44 (Note 1)
180 (Note 1)
692 (Note 1)
- 55 to +150
Max
Max
1.83
230
544
Max
0.25
61.1
100
500
0.1
0.2
1.2
-
-
-
-
mW/°C
mW/°C
mAdc
°C/W
°C/W
nAdc
nAdc
Unit
Unit
Unit
mW
mW
Vdc
Vdc
Vdc
Vdc
Vdc
kW
°C