NSM21356DW6 ON Semiconductor, NSM21356DW6 Datasheet

NSM21356DW6

Manufacturer Part Number

NSM21356DW6

Description

Dual Complementary Transistors

Manufacturer

ON Semiconductor

Datasheet

1.NSM21356DW6.pdf (4 pages)

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NSM21356DW6T1G

Dual Complementary

Transistors

General Purpose PNP Transistor and

NPN Transistors with Monolithic Bias

Network

monolithic bias network NPN transistor with two resistors; a series

base resistor and a base-emitter resistor. This device is designed to

replace multiple transistors and resistors on customer boards by

i n t e g r a t i n g t h e s e c o m p o n e n t s i n t o a s i n g l e d e v i c e .

NSM21356DW6T1G is housed in a SC-88/SOT-363 package which

is ideal for low power surface mount applications in space constrained

applications.

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

MAXIMUM RATINGS

March, 2008 - Rev. 0

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector‐Base Voltage

Collector‐Emitter Voltage

Collector Current

NSM21356DW6T1G contains a single PNP transistor and a

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

Q1: NPN BRT, R1 = R2 = 47 k

Q2: PNP

This is a Pb-Free Device

Logic Switching

Amplification

Driver Circuits

Interface Circuits

= 25°C unless otherwise noted)

Rating - Q1 (NPN BRT)

Rating - Q2 (PNP)

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

CBO

CEO

Value

-100

- 5.0

100

- 80

- 65

mAdc

Unit

Vdc

†For information on tape and reel specifications,

NSM21356DW6T1G

*Date Code orientation and/or position may vary

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

depending upon manufacturing location.

Device

(Note: Microdot may be in either location)

ORDERING INFORMATION

(4)

(3)

MARKING DIAGRAM

http://onsemi.com

SC-88/SOT-363

= Device Code

= Date Code*

= Pb-Free Package

CASE 419B

STYLE 1

(Pb-Free)

Package

(5)

N2 M G

SC-88

Publication Order Number:

(2)

NSM21356DW6/D

3000/Tape & Reel

Shipping

(1)

(6)

†

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NSM21356DW6 Summary of contents

Page 1

... General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network NSM21356DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series base resistor and a base-emitter resistor. This device is designed to replace multiple transistors and resistors on customer boards ...

Page 2

... C B Output Voltage ( 1.0 kW Output Voltage (off 5 0 1.0 kW Input Resistor Resistor Ratio 2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% NSM21356DW6T1G (T = 25°C unless otherwise noted) A Symbol I CBO I CEO I EBO V (BR)CBO V (BR)CEO CE(sat ...

Page 3

... -100 mA -5.0 mA Base - Emitter On Voltage (I = -2 - 300 250 200 150 100 NSM21356DW6T1G (T = 25°C unless otherwise noted) A Symbol V (BR)CEO V (BR)CES V (BR)CBO V (BR)EBO I CBO = 150° CE(sat) V BE(sat) V BE(on 833°C/W qJA ...

Page 4

... BSC L 0.10 0.20 0.30 0.004 0.008 0.012 H 2.00 2.10 2.20 0.078 0.082 0.086 E STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 0.65 0.025 0.65 0.025 mm ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NSM21356DW6/D ...

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