NP180N04TUG Renesas Electronics Corporation., NP180N04TUG Datasheet - Page 2

• Manufacturer Part Number: NP180N04TUG
• Description: Switching N-channel Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
Note Pulsed test
TEST CIRCUIT 1 AVALANCHE CAPABILITY
V
TEST CIRCUIT 3 GATE CHARGE
2
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
= 20
PG.
→
0 V
CHARACTERISTICS
PG.
I
G
V
= 2 mA
50
DD
R
D.U.T.
Ω
G
I
D
= 25
50
I
AS
D.U.T.
Ω
Ω
Note
Note
BV
DSS
Starting T
R
V
Note
L
DD
V
DS
L
V
DD
I
I
V
| y
R
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
ch
SYMBOL
DSS
GSS
d(on)
r
d(off)
f
rr
GS(th)
DS(on)
iss
oss
rss
F(S-D)
G
GS
GD
rr
fs
|
A
= 25°C)
Data Sheet D18896EJ1V0DS
V
V
V
V
V
V
V
f = 1 MHz
V
V
R
V
V
I
I
I
di/dt = 100 A/
V
0
D
F
F
GS
DS
GS
DS
DS
GS
DS
GS
DD
GS
G
DD
GS
= 180 A, V
= 180 A, V
τ = 1 s
Duty Cycle
= 180 A
= 0 Ω
= 40 V, V
= V
= 5 V, I
= 25 V,
= ±20 V, V
= 10 V, I
= 0 V,
= 20 V, I
= 10 V,
= 10 V,
TEST CIRCUIT 2 SWITCHING TIME
= 32 V,
PG.
μ
GS
TEST CONDITIONS
τ
, I
D
D
D
D
GS
GS
≤
= 45 A
= 250
μ
GS
= 90 A
= 90 A,
1%
s
DS
= 0 V
= 0 V,
= 0 V
R
= 0 V
G
D.U.T.
μ
A
R
V
DD
L
MIN.
V
Wave Form
V
Wave Form
2.0
51
GS
DS
V
V
V
GS
DS
17100
0
0
TYP.
1420
DS
107
890
104
260
110
3.0
1.2
0.9
54
43
21
52
88
65
10%
t
d(on)
NP180N04TUG
90%
t
on
10% 10%
25700
t
MAX.
±100
2130
1610
r
120
110
210
390
4.0
1.5
1.5
60
1
V
GS
t
d(off)
t
off
90%
UNIT
mΩ
μ
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
90%
t
V
S
V
f
A