NP180N04TUG Renesas Electronics Corporation., NP180N04TUG Datasheet

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NP180N04TUG

Manufacturer Part Number
NP180N04TUG
Description
Switching N-channel Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NP180N04TUG-E1-AY
Manufacturer:
IXYS
Quantity:
3 343
Document No. D18896EJ1V0DS00 (1st edition)
Date Published September 2007 NS
Printed in Japan
DESCRIPTION
ORDERING INFORMATION
Note Pb-free (This product does not contain Pb in the external electrode).
FEATURES
• Super low on-state resistance
• High Current Rating
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Notes 1. PW ≤ 10
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
The NP180N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
R
I
D(DC)
DS(on)
NP180N04TUG-E1-AY
NP180N04TUG-E2-AY
2. Starting T
3. R
= ±180 A
= 1.2 mΩ TYP. / 1.5 mΩ MAX. (V
PART NUMBER
G
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
= 25 Ω, T
μ
ch
s, Duty Cycle ≤ 1%
Note1
C
= 25°C, V
ch(peak)
= 25°C)
Note
Note
Note2
DS
C
A
GS
= 25°C)
= 25°C)
= 0 V)
Note3
≤ 150°C
= 0 V)
Note3
DD
N-CHANNEL POWER MOS FET
= 20 V, R
LEAD PLATING
Pure Sn (Tin)
GS
A
G
R
R
= 10 V, I
= 25°C)
V
V
I
I
P
P
T
T
E
I
E
= 25 Ω, V
DATA SHEET
th(ch-C)
th(ch-A)
D(DC)
D(pulse)
AR
ch
stg
DSS
GSS
T1
T2
AS
AR
SWITCHING
D
= 90 A)
GS
MOS FIELD EFFECT TRANSISTOR
= 20 → 0 V, L = 100
0.52
83.3
−55 to +175
±180
±720
±20
288
175
518
518
800 p/reel
1.8
PACKING
40
72
Tape
°C/W
°C/W
NP180N04TUG
mJ
mJ
°C
°C
W
W
V
V
A
A
A
μ
H
TO-263-7pin (MP-25ZT)
PACKAGE
typ. 1.5 g
(TO-263-7pin)
2007

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NP180N04TUG Summary of contents

Page 1

... DESCRIPTION The NP180N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER Note NP180N04TUG-E1-AY Note NP180N04TUG-E2-AY Note Pb-free (This product does not contain Pb in the external electrode). FEATURES • Super low on-state resistance R = 1.2 mΩ TYP. / 1.5 mΩ MAX. (V DS(on) • ...

Page 2

... μ Q di/dt = 100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG τ τ μ ≤ Duty Cycle 1% ch Data Sheet D18896EJ1V0DS NP180N04TUG MIN. TYP. MAX. UNIT μ ±100 nA 2.0 3.0 4 107 S 1.2 1.5 mΩ 17100 25700 pF 1420 2130 pF 890 ...

Page 3

... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 300 250 200 150 100 150 175 100 R = 83.3°C/Wi th(ch- 0.52°C/Wi th(ch- 100 Pulse Width - s Data Sheet D18896EJ1V0DS NP180N04TUG 50 75 100 125 150 175 - Case Temperature - ° Single Pulse 100 1000 3 ...

Page 4

... 250 μA 1 175 225 0.1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1000 0 Data Sheet D18896EJ1V0DS NP180N04TUG = −55°C 25°C 75°C 150°C 175° Pulsed Gate to Source Voltage - −55°C ...

Page 5

... Q G REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 100 10 di/dt = 100 A/μ 1.5 0 Diode Forward Current - A F Data Sheet D18896EJ1V0DS NP180N04TUG C iss C oss C rss 1 10 100 (160 180 120 ...

Page 6

... Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 1.3 ± 0.2 0.025 to 0.25 Data Sheet D18896EJ1V0DS NP180N04TUG ...

Page 7

... NEC 180N04 UG RECOMMENDED SOLDERING CONDITIONS The NP180N04TUG should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) ...

Page 8

... NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). NP180N04TUG M8E 02. 11-1 ...

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