NP100P06PLG Renesas Electronics Corporation., NP100P06PLG Datasheet - Page 4

• Manufacturer Part Number: NP100P06PLG
• Description: Mos Field Effect Transistor
• Manufacturer: Renesas Electronics Corporation.

4
-300
-250
-200
-150
-100
-50
-2.5
-1.5
-0.5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
0
-3
-2
-1
0
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
8
6
4
2
0
-75
0
-1
V
I
D
DS
= −1 mA
V
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-25
= −10 V
GS
DS
T
V
ch
-0.5
= − 4.5 V
- Drain to Source Voltage - V
GS
- Channel Temperature - °C
− 10 V
I
= −10 V
D
-10
25
- Drain Current - A
-1
75
−4.5 V
-100
125
-1.5
Pulsed
175
Pulsed
Data Sheet D18695EJ3V0DS
-1000
225
-2
-0.001
-1000
-0.01
1000
-100
-0.1
100
-10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0.1
10
-1
20
16
12
1
8
4
0
FORWARD TRANSFER CHARACTERISTICS
-0.1
0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
0
V
Pulsed
V
Pulsed
Pulsed
DS
DS
= −10 V
= −10V
V
V
T
GS
-1
GS
ch
- Gate to Source Voltage - V
-1
= −55°C
-5
- Gate to Source Voltage - V
I
−25°C
D
25°C
75°C
- Drain Current - A
I
125°C
150°C
175°C
D
-2
= −100 A
−50 A
−20 A
-10
-10
NP100P06PLG
-3
T
ch
= −55°C
-100
−25°C
125°C
150°C
175°C
-15
25°C
75°C
-4
-1000
-20
-5