NP100P06PLG Renesas Electronics Corporation., NP100P06PLG Datasheet - Page 3

• Manufacturer Part Number: NP100P06PLG
• Description: Mos Field Effect Transistor
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
-1000
-100
120
100
-0.1
-10
80
60
40
20
-1
0
-0.1
0
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
R
(V
T
Single Pulse
C
DS(on)
GS
25
= 25°C
V
= −10 V)
T
DS
Limited
ch
- Channel Temperature - °C
- Drain to Source Voltage - V
50
0.001
1000
0.01
100
0.1
I
10
D(DC)
-1
1
75 100 125 150 175 200
1 m
DC
I
D(pulse)
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
-10
10 m
A
= 25°C)
Data Sheet D18695EJ3V0DS
100 m
-100
PW - Pulse Width - s
1
R
R
th(ch-A)
th(ch-C)
=
=
240
200
160
120
80
40
83.3°C/Wi
0.75°C/Wi
0
10
0
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25
T
50
C
100
Single Pulse
- Case Temperature - °C
75
100 125 150 175 200
1000
NP100P06PLG
3