NP100P06PDG Renesas Electronics Corporation., NP100P06PDG Datasheet - Page 2

• Manufacturer Part Number: NP100P06PDG
• Description: Mos Field Effect Transistor
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
Note Pulsed test PW ≤ 350
2
TEST CIRCUIT 1 AVALANCHE CAPABILITY
V
TEST CIRCUIT 3 GATE CHARGE
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
PG.
= −20 → 0 V
−
I
CHARACTERISTICS
PG.
G
V
= −2 mA
50 Ω
DD
I
R
D
D.U.T.
G
= 25 Ω
50 Ω
I
AS
D.U.T.
BV
Note
DSS
Note
μ
Starting T
s, Duty Cycle ≤ 2%
V
R
V
DS
DD
L
Note
L
V
ch
DD
I
I
V
| y
R
R
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
SYMBOL
DSS
GSS
d(on)
r
d(off)
f
rr
GS(th)
DS(on)1
DS(on)2
iss
oss
rss
F(S-D)
G
GS
GD
rr
fs
|
A
= 25°C)
Data Sheet D18693EJ3V0DS
V
V
V
V
V
V
V
V
f = 1 MHz
V
V
R
V
V
I
I
I
di/dt = −100 A/
V
D
F
F
0
DS
GS
DS
DS
GS
GS
DS
GS
DD
GS
G
DD
GS
GS
= −100 A, V
= −100 A, V
= −100 A
τ = 1 s
Duty Cycle ≤ 1%
PG.
= 0 Ω
(−)
= −60 V, V
= −10 V, I
= −10 V, I
= −10 V,
= m20 V, V
= −10 V, I
= −4.5 V, I
= 0 V,
= −30 V, I
= −10 V,
= −10 V,
= −48 V,
TEST CIRCUIT 2 SWITCHING TIME
μ
TEST CONDITIONS
τ
D
D
D
D
R
GS
GS
D
μ
GS
DS
G
= −1 mA
= −50 A
= −50 A
= −45 A,
s
= −50 A
= 0 V
= 0 V,
= 0 V
= 0 V
D.U.T.
R
V
DD
L
V
Wave Form
V
Wave Form
GS
DS
MIN.
−1.0
43
V
V
V
GS
DS
15000
DS
0
0
TYP.
1810
−1.6
0.92
840
275
100
300
135
4.4
5.0
(−)
(−)
86
28
35
35
85
67
10%
t
90%
d(on)
NP100P06PDG
t
on
10%
MAX.
t
m100
−2.5
r
−10
6.0
7.8
1.5
V
GS
t
10%
d(off)
t
off
90%
UNIT
90%
mΩ
mΩ
μ
nA
nC
nC
nC
nC
t
pF
pF
pF
ns
ns
ns
ns
ns
V
S
V
f
A