NP100P06PDG Renesas Electronics Corporation., NP100P06PDG Datasheet
NP100P06PDG
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NP100P06PDG Summary of contents
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... DESCRIPTION The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION <R> PART NUMBER Note NP100P06PDG-E1-AY Note NP100P06PDG-E2-AY Note Pb-free (This product does not contain Pb in external electrode.) FEATURES • Super low on-state resistance R = 6.0 mΩ MAX − ...
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... μ Q di/dt = −100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG (− τ τ μ Duty Cycle ≤ 1% Data Sheet D18693EJ3V0DS NP100P06PDG MIN. TYP. MAX. UNIT μ − m100 −1.0 −1.6 −2 4.4 6.0 mΩ 5.0 7.8 mΩ 15000 pF ...
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... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 240 200 160 120 -100 R = 83.3°C/Wi th(ch- 0.75°C/Wi th(ch-C) 100 Pulse Width - s Data Sheet D18693EJ3V0DS NP100P06PDG 50 75 100 125 150 175 200 - Case Temperature - ° Single Pulse 100 1000 3 ...
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... DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed Pulsed 0 -1000 Data Sheet D18693EJ3V0DS NP100P06PDG = −55° −25°C 25°C 75°C 125°C 150°C 175° Gate to Source Voltage - V 125°C 150°C 175° ...
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... Q G REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 100 10 di/dt = −100 A/μ 1.5 -0 Diode Forward Current - A F Data Sheet D18693EJ3V0DS NP100P06PDG C iss C oss C rss -1 -10 -100 -12 -10 −30 V − −100 ...
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... Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 1.3 ±0.2 0.025 to 0.25 Data Sheet D18693EJ3V0DS NP100P06PDG ...
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... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). NP100P06PDG Not all M8E 02. 11-1 ...