MTV32N25E ON Semiconductor, MTV32N25E Datasheet - Page 7

• Manufacturer Part Number: MTV32N25E
• Description: Power Mosfets
• Manufacturer: ON Semiconductor

100
0.1
10
1
0.1
0.001
V
SINGLE PULSE
T
0.01
GS
C
0.1
Figure 12. Maximum Rated Forward Biased
1.0E−05
= 25°C
1
= 20 V
0.2
0.1
D = 0.5
0.02
0.05
0.01
SINGLE PULSE
V
DS
1
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
Safe Operating Area
LIMIT
100 μs
1.0E−04
1 ms
10
10 ms
dc
Figure 15. Diode Reverse Recovery Waveform
I
S
100
1.0E−03
SAFE OPERATING AREA
Figure 14. Thermal Response
t
p
http://onsemi.com
1000
di/dt
t
t, TIME (s)
a
7
1.0E−02
t
rr
t
b
I
S
P
600
500
400
300
200
100
(pk)
0.25 I
0
DUTY CYCLE, D = t
25
Figure 13. Maximum Avalanche Energy versus
S
t
1
t
2
T
J
1.0E−01
, STARTING JUNCTION TEMPERATURE (°C)
50
Starting Junction Temperature
TIME
1
/t
2
75
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
θJC
(t) = r(t) R
− T
1.0E+00
C
= P
100
(pk)
θJC
1
R
θJC
(t)
125
I
D
1.0E+01
= 32 A
15