MTV32N25E ON Semiconductor, MTV32N25E Datasheet

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MTV32N25E

Manufacturer Part Number
MTV32N25E
Description
Power Mosfets
Manufacturer
ON Semiconductor
Datasheet

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Part Number
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Quantity
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Part Number:
MTV32N25E
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MTV32N25E/D
Manufacturer:
ON
Quantity:
12 500
MTV32N25E
Designer’s™ Data Sheet
TMOS E−FET.™
Power Field Effect
Transistor
D
N−Channel Enhancement−Mode Silicon
Gate
size of any standard, plastic, surface mount power semiconductor. This
allows it to be used in applications that require surface mount
components with higher power and lower R
high voltage MOSFET uses an advanced termination scheme to provide
enhanced voltage−blocking capability without degrading performance
over time. In addition, this advanced TMOS E−FET is designed to
withstand high energy in the avalanche and commutation modes. The
new energy efficient design also offers a drain−to−source diode with a
fast recovery time. Designed for low voltage, high speed switching
applications in surface mount PWM motor controls and both ac−dc and
dc−dc power supplies. These devices are particularly well suited for
bridge circuits where diode speed and commutating safe operating areas
are critical and offer additional safety margin against unexpected
voltage transients.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 1
The D
to Part Number
Avalanche Energy Specified
Diode is Characterized for Use in Bridge Circuits
I
Short Heatsink Tab Manufactured − Not Sheared
Specifically Designed Leadframe for Maximum Power Dissipation
Available in 24 mm, 13−inch/500 Unit Tape & Reel, Add −RL Suffix
Robust High Voltage Termination
Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
3
DSS
PAK for Surface Mount
and V
3
PAK package has the capability of housing the largest chip
DS(on)
Specified at Elevated Temperature
DS(on)
capabilities. This
1
32 AMPERES, 250 VOLTS
TMOS POWER FET
R
http://onsemi.com
DS(on)
®
= 0.08 W
Publication Order Number:
D
N−Channel
3
G
PAK Surface Mount
CASE 433−01
Style 2
MTV32N25E/D
D
S

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MTV32N25E Summary of contents

Page 1

... Available in 24 mm, 13−inch/500 Unit Tape & Reel, Add −RL Suffix to Part Number © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev AMPERES, 250 VOLTS capabilities. This DS(on) 1 http://onsemi.com TMOS POWER FET R = 0.08 W DS(on PAK Surface Mount CASE 433−01 Style 2 D N−Channel G ® S Publication Order Number: MTV32N25E/D ...

Page 2

MAXIMUM RATINGS (T = 25°C unless otherwise noted) C Drain−Source Voltage Drain−Gate Voltage (R = 1.0 MΩ) GS Gate−Source Voltage — Continuous Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (t ≤ 10 ...

Page 3

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage ( Vdc 250 μAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (V = 250 Vdc Vdc 250 Vdc, ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS 25° DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. ...

Page 5

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Δt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 6

TOTAL GATE CHARGE (nC) g Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge ...

Page 7

SINGLE PULSE T = 25°C C 100 μ LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.1 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 12. ...

Page 8

INFORMATION FOR USING THE DPAK SURFACE MOUNT PACKAGE RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure proper ...

Page 9

Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. Solder stencils are used to screen the optimum amount. These stencils are typically 0.008 inches thick and may be made of ...

Page 10

For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings ...

Page 11

... S 0.313 0.317 7.95 8.05 U 0.028 0.032 0.71 0.81 V 0.050 −−− 1.27 −−− W 0.054 0.058 1.37 1.47 X 0.050 0.060 1.27 1.52 Y 0.104 0.108 2.64 2.74 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MTV32N25E/D ...

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