NP32N055HLE Renesas Electronics Corporation., NP32N055HLE Datasheet - Page 6

• Manufacturer Part Number: NP32N055HLE
• Description: Switching N-channel Power Mos Fet Industrial Use
• Manufacturer: Renesas Electronics Corporation.

PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
Remark
6
1.3 MAX.
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
1
6.5±0.2
5.0±0.2
2.3
2
2.3
4
3
Drain
Source
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.3±0.2
Body
Diode
0.5±0.1
Data Sheet D14137EJ3V0DS
2) TO-252 (MP-3Z)
1.3 MAX.
NP32N055HLE, NP32N055ILE
1
6.5±0.2
5.0±0.2
2.3 2.3
2
4
3
MAX.
0.9
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MAX.
0.8
2.3±0.2
0.8
0.5±0.1