NP32N055HLE Renesas Electronics Corporation., NP32N055HLE Datasheet

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NP32N055HLE

Manufacturer Part Number
NP32N055HLE
Description
Switching N-channel Power Mos Fet Industrial Use
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
NP32N055HLE
Manufacturer:
NEC/RENESAS
Quantity:
12 500
Document No.
Date Published
Printed in Japan
ABSOLUTE MAXIMUM RATINGS (T
Notes 1. PW
THERMAL RESISTANCE
DESCRIPTION
Transistor designed for high current switching
applications.
FEATURES
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Single Avalanche Current
Single Avalanche Energy
Channel Temperature
Storage Temperature
Channel to Case
Channel to Ambient
Channel temperature 175 degree rated
Super low on-state resistance
R
R
Low C
Built-in gate protection diode
These products are N-channel MOS Field Effect
DS(on)1
DS(on)2
2. Starting T
iss
= 24 m
= 29 m
D14137EJ3V0DS00 (3rd edition)
March 2001 NS CP(K)
: C
iss
= 1300 pF TYP.
10 s, Duty cycle
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
MAX. (V
MAX. (V
ch
Note1
= 25°C , R
Note2
Note2
A
C
= 25° C)
= 25° C)
GS
GS
= 10 V, I
= 5.0 V, I
G
= 25
N-CHANNEL POWER MOS FET
1 %
D
D
= 16 A)
, V
= 16 A)
A
R
R
I
The mark
I
D(pulse)
V
V
= 25°C)
E
th(ch-C)
th(ch-A)
D(DC)
T
T
GS
P
P
I
DSS
GSS
AS
INDUSTRIAL USE
AS
stg
ch
T
T
= 20 V 0 V (See Figure 4.)
DATA SHEET
SWITCHING
7.8 / 44 / 64
–55 to +175
28 / 21 / 8
shows major revised points.
2.27
175
125
1.2
MOS FIELD EFFECT TRANSISTOR
55
100
66
20
32
NP32N055HLE, NP32N055ILE
ORDERING INFORMATION
PART NUMBER
NP32N055HLE
NP32N055ILE
°C/W
°C/W
mJ
°C
°C
W
W
V
V
A
A
A
PACKAGE
TO-251
TO-252
(TO-251)
(TO-252)
©
1999

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NP32N055HLE Summary of contents

Page 1

... Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14137EJ3V0DS00 (3rd edition) Date Published March 2001 NS CP(K) Printed in Japan DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HLE, NP32N055ILE SWITCHING INDUSTRIAL USE ORDERING INFORMATION PART NUMBER NP32N055HLE NP32N055ILE = ...

Page 2

... G PG DSS Starting T TEST CIRCUIT 3 GATE CHARGE D.U. PG NP32N055HLE, NP32N055ILE = 25 °C) A SYMBOL TEST CONDITIONS DS(on 5 DS(on 4 DS(on 250 A ...

Page 3

... Single Pulse 0.1 0 Drain to Source Voltage - Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 100 10 1 0.1 0.01 µ µ 100 NP32N055HLE, NP32N055ILE = 25 °C) Figure2. TOTAL POWER DISSIPATION vs Figure4. SINGLE AVALANCHE ENERGY ...

Page 4

... Figure10. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 5 Drain Current - NP32N055HLE, NP32N055ILE Figure7. DRAIN CURRENT vs. 120 100 4 5.0 6 Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE ...

Page 5

... Drain to Source Voltage - V DS Figure16. REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 di/dt = 100 A/µ 100 10 1 0.1 1 Drain Current - A F NP32N055HLE, NP32N055ILE Figure13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 Pulsed 100 0 Source to Drain Voltage - V SD Figure15. SWITCHING CHARACTERISTICS ...

Page 6

... Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 NP32N055HLE, NP32N055ILE 2) TO-252 (MP-3Z) 6.5±0.2 5.0±0.2 4 ...

Page 7

... NP32N055HLE, NP32N055ILE Data Sheet D14137EJ3V0DS 7 ...

Page 8

... NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). NP32N055HLE, NP32N055ILE Please check with an NEC sales representative for The M8E 00. 4 ...

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