FMC05N60E Fuji Electric holdings CO.,Ltd, FMC05N60E Datasheet - Page 3

• Manufacturer Part Number: FMC05N60E
• Description: N-channel Silicon Power Mosfet
• Manufacturer: Fuji Electric holdings CO.,Ltd

FMC05N60E
0.01
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
20
18
16
14
12
10
10
8
6
4
2
0
1
0.00
0
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=2.8A,VGS=10V
-50
Typical Gate Charge Characteristics
VGS=f(Qg):ID=5.5A,Tch=25
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
-25
10
0.25
0
20
µ
s pulse test,Tch=25
0.50
Vcc= 120V
480V
25
300V
30
VSD [V]
Tch [
Qg [nC]
0.75
50
max.
°
C]
40
°
C
75
1.00
typ.
50
°
C
100
1.25
60
125
1.50
150
70
3 3
10
10
10
10
10
10
10
10
10
6
5
4
3
2
1
0
3
2
1
0
4
3
2
1
0
10
10
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
-50
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=24
-2
-1
-25
td(on)
tr
10
-1
0
tf
25
td(off)
10
10
VDS [V]
0
ID [A]
0
Tch [
50
max.
min.
typ.
°
C]
10
75
1
FUJI POWER MOSFET
µ
A
100
Ω
10
10
125
2
1
Ciss
Coss
Crss
150