FMC05N60E Fuji Electric holdings CO.,Ltd, FMC05N60E Datasheet - Page 2

• Manufacturer Part Number: FMC05N60E
• Description: N-channel Silicon Power Mosfet
• Manufacturer: Fuji Electric holdings CO.,Ltd

FMC05N60E
0.01
120
100
100
0.1
80
60
40
20
15
12
10
0
9
6
3
0
1
0.01
0
0
Typical Transconductance
gfs=f(ID):80
Allowable Power Dissipation
PD=f(Tc)
Typical Output Characteristics
ID=f(VDS):80
25
4
0.1
µ
s pulse test,VDS=25V,Tch=25
µ
s pulse test,Tch=25
50
8
ID [A]
Tc [
VDS [V]
75
12
1
°
C]
100
16
°
C
10
125
20
VGS=4.0V
4.5V
10V
5.0V
6.0V
°
C
100
150
24
2
2
10
10
10
10
10
10
10
10
10
10
10
2.0
1.8
1.6
1.4
1.2
1.0
-1
-2
-1
-2
-3
-4
2
1
0
1
0
10
0
0
Safe Operating Area
I
Typical Transfer Characteristic
ID=f(VGS):80
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
D
-1
VGS=4.0V
=f(V
Power loss waveform :
Power loss waveform :
Square waveform
Square waveform
1
DS
):Duty=0(Single pulse),Tc=25
2
4.5V
2
P
P
P
10
t
t
t
D
D
D
0
µ
4
3
s pulse test,VDS=25V,Tch=25
µ
4
s pulse test,Tch=25
VGS[V]
6
VDS [V]
10
ID [A]
5
1
8
5V
6
°
c
FUJI POWER MOSFET
7
10
10
2
8
°
6V
C
10V
12
9
°
C
100
1ms
t=
1
10
DC
10
µ
10
14
s
µ
s
µ
3
s