FMC20N50E Fuji Electric holdings CO.,Ltd, FMC20N50E Datasheet - Page 3

• Manufacturer Part Number: FMC20N50E
• Description: N-channel Silicon Power Mosfet
• Manufacturer: Fuji Electric holdings CO.,Ltd

FMC20N50E
100
1.0
0.8
0.6
0.4
0.2
0.0
0.1
14
12
10
10
1
8
6
4
2
0
0.00
0
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=10A,VGS=10V
-50
Typical Gate Charge Characteristics
VGS=f(Qg):ID=20A,Tch=25
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
0.25
-25
20
0.50
0
µ
s pulse test,Tch=25
40
0.75
25
max.
VSD [V]
Qg [nC]
Tch [
typ.
1.00
60
400V
50
°
Vcc= 100V
C]
250V
°
C
1.25
75
80
°
1.50
100
C
100
1.75
125
120
2.00
150
3 3
10
10
10
10
10
10
10
10
10
6
5
4
3
2
1
0
3
2
1
0
4
3
2
1
0
10
10
-50
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω
-1
-1
-25
td(on)
tf
tr
10
td(off)
0
0
10
0
25
VDS [V]
ID [A]
10
Tch [
50
1
max.
min.
typ.
°
C]
75
10
1
µ
10
100
A
FUJI POWER MOSFET
2
Ciss
Coss
Crss
125
10
10
150
2
3