FMC20N50E Fuji Electric holdings CO.,Ltd, FMC20N50E Datasheet - Page 2

• Manufacturer Part Number: FMC20N50E
• Description: N-channel Silicon Power Mosfet
• Manufacturer: Fuji Electric holdings CO.,Ltd

FMC20N50E
100
400
300
200
100
0.1
50
40
30
20
10
10
0
1
0
0.1
0
0
Typical Output Characteristics
ID=f(VDS):80
Allowable Power Dissipation
PD=f(Tc)
Typical Transconductance
gfs=f(ID):80
25
4
µ
s pulse test,VDS=25V,Tch=25
µ
50
s pulse test,Tch=25
1
8
VDS [V]
ID [A]
Tc [
75
12
°
C]
100
10
16
°
C
VGS=4.5V
125
20
10V
6.0V
5.5V
5.0V
°
C
150
100
24
2
2
100
10
10
10
10
10
0.1
0.8
0.7
0.6
0.5
0.4
0.3
0.2
10
1
-1
-2
2
1
0
10
2
0
Safe Operating Area
I
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
Typical Transfer Characteristic
ID=f(VGS):80
D
-1
=f(V
Pow er loss w aveform :
Pow er loss w aveform :
Square waveform
Square waveform
DS
VGS=4.5V
5
):Duty=0(Single pulse),Tc=25
3
P
P
P
10
D
D
D
t
t
t
10
0
µ
s pulse test,VDS=25V,Tch=25
15
µ
4
s pulse test,Tch=25
VGS[V]
VDS [V]
10
ID [A]
20
1
5V
5
25
°
c
10
30
2
FUJI POWER MOSFET
6
°
C
35
100
1ms
D.C.
t=
1
°
5.5V
10
10V
C
6V
µ
s
10
µ
40
7
µ
s
s
3