FMC16N50E Fuji Electric holdings CO.,Ltd, FMC16N50E Datasheet - Page 3

• Manufacturer Part Number: FMC16N50E
• Description: N-channel Silicon Power Mosfet
• Manufacturer: Fuji Electric holdings CO.,Ltd

FMC16N50E
100
0.1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
14
12
10
10
8
6
4
2
0
1
0.00
0
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=8A,VGS=10V
-50
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
Typical Gate Charge Characteristics
VGS=f(Qg):ID=16A,Tch=25
0.25
-25
20
0.50
0
µ
s pulse test,Tch=25
0.75
max.
25
40
VSD [V]
typ.
Tch [
Qg [nC]
400V
1.00
50
Vcc= 100V
°
250V
C]
°
60
C
1.25
75
°
1.50
100
C
80
1.75
125
100
2.00
150
3 3
10
10
10
10
10
10
10
10
10
6
5
4
3
2
1
0
3
2
1
0
4
3
2
1
0
10
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
-50
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω
-1
-25
10
0
td(on)
tf
tr
td(off)
0
10
0
25
10
VDS [V]
1
ID [A]
Tch [
50
max.
min.
typ.
°
C]
75
10
1
10
µ
2
A
100
FUJI POWER MOSFET
Ciss
Coss
Crss
125
10
10
150
3
2