FMC16N50E Fuji Electric holdings CO.,Ltd, FMC16N50E Datasheet - Page 2

• Manufacturer Part Number: FMC16N50E
• Description: N-channel Silicon Power Mosfet
• Manufacturer: Fuji Electric holdings CO.,Ltd

FMC16N50E
100
300
250
200
150
100
0.1
50
40
30
20
10
10
50
0
1
0
0.1
0
0
Allowable Power Dissipation
PD=f(Tc)
Typical Output Characteristics
ID=f(VDS):80
Typical Transconductance
gfs=f(ID):80
25
4
µ
s pulse test,VDS=25V,Tch=25
µ
s pulse test,Tch=25
50
8
1
VDS [V]
ID [A]
Tc [
75
12
°
C]
100
16
10
°
C
125
VGS=4.5V
20
5.0V
10V
6.0V
°
5.5V
C
150
100
24
2
2
100
10
10
10
10
10
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
1
-1
-2
2
1
0
10
0
0
Safe Operating Area
I
Typical Transfer Characteristic
ID=f(VGS):80
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
D
0
=f(V
Power loss wavefor m :
Power loss wavefor m :
Square w aveform
Square w aveform
1
DS
VGS=4.5V
5
):Duty=0(Single pulse),Tc=25
2
P
P
P
t
t
t
D
D
D
10
µ
3
10
s pulse test,VDS=25V,Tch=25
5V
1
15
µ
4
s pulse test,Tch=25
VGS[V]
VDS [V]
ID [A]
20
5
6
25
10
°
c
2
7
5.5V
30
FUJI POWER MOSFET
8
°
C
35
6V
9
100
t=
1
10
1ms
D.C.
µ
10V
°
s
µ
C
µ
s
10
10
40
s
3