FMC12N50E Fuji Electric holdings CO.,Ltd, FMC12N50E Datasheet - Page 3

• Manufacturer Part Number: FMC12N50E
• Description: N-channel Silicon Power Mosfet
• Manufacturer: Fuji Electric holdings CO.,Ltd

FMC12N50E
0.01
100
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
20
18
16
14
12
10
10
8
6
4
2
0
1
0.00
0
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=6A,VGS=10V
Typical Gate Charge Characteristics
VGS=f(Qg):ID=12A,Tch=25
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
-50
10
-25
0.25
20
0
µ
s pulse test,Tch=25
0.50
30
25
VSD [V]
Tch [
Qg [nC]
max.
0.75
40
50
400V
Vcc= 100V
°
C]
°
250V
C
50
75
1.00
typ.
°
C
100
60
1.25
125
70
1.50
150
80
3 3
10
10
10
10
10
10
10
10
10
6
5
4
3
2
1
0
4
3
2
1
0
3
2
1
0
10
10
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=15 Ω
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
-50
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
-2
-1
-25
td(on)
tr
10
-1
0
10
0
tf
td(off)
25
10
VDS [V]
0
ID [A]
Tch [
50
max.
min.
typ.
°
C]
10
75
10
1
1
µ
A
100
FUJI POWER MOSFET
10
125
2
Ciss
Crss
Coss
10
150
2