FMC12N50E Fuji Electric holdings CO.,Ltd, FMC12N50E Datasheet - Page 2

• Manufacturer Part Number: FMC12N50E
• Description: N-channel Silicon Power Mosfet
• Manufacturer: Fuji Electric holdings CO.,Ltd

FMC12N50E
0.01
200
180
160
140
120
100
100
0.1
80
60
40
20
20
18
16
14
12
10
10
0
8
6
4
2
0
1
0.01
0
0
Allowable Power Dissipation
PD=f(Tc)
Typical Output Characteristics
ID=f(VDS):80
Typical Transconductance
gfs=f(ID):80
2
25
0.1
µ
s pulse test,VDS=25V,Tch=25
µ
4
s pulse test,Tch=25
50
6
VDS [V]
ID [A]
Tc [
75
1
°
C]
8
100
°
10
C
10
125
VGS=4.0V
12
6.0V
20V
10V
°
C
5.0V
4.5V
150
100
14
2
2
10
10
10
10
10
10
10
10
10
10
10
0.9
0.8
0.7
0.6
0.5
0.4
0.3
-1
-2
-1
-2
-3
-4
2
1
0
1
0
10
2
0
Safe Operating Area
I
Typical Transfer Characteristic
ID=f(VGS):80
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
D
-1
VGS=4.0V
=f(V
Power loss waveform :
Power loss waveform :
Square waveform
Square waveform
DS
):Duty=0(Single pulse),Tc=25
P
P
P
5
10
t
t
t
4.5V
D
D
D
3
0
µ
s pulse test,VDS=25V,Tch=25
µ
s pulse test,Tch=25
VGS[V]
10
VDS [V]
10
ID [A]
4
1
5V
°
15
c
10
5
2
FUJI POWER MOSFET
°
C
6V
20
10V
20V
°
C
t=
1
10
100
1ms
DC
µ
s
10
µ
6
s
µ
3
s