VND670 STMicroelectronics, VND670 Datasheet - Page 3

• Manufacturer Part Number: VND670
• Description: Dual High Side Switch With Dual Power Mos Gate Driver Bridge Configuration
• Manufacturer: STMicroelectronics

THERMAL DATA
POWER
SWITCHING (V
PROTECTION AND DIAGNOSTIC
(*) When mounted using the recommended pad size on FR-4 board (See AN515 Application Note).
ELECTRICAL CHARACTERISTICS (V
(dV
(dV
R
Symbol
Symbol
Symbol
Symbol
R
thj-amb
OUT
OUT
V
V
t
t
T
V
t
t
R
V
V
V
D(on)
D(off)
I
V
thj-case
dong
doffg
t
USD
LIM
TSD
gs,cl
t
t
gate
del
I
t
t
OV
CC
ON
rg
fg
ocl
sat
s
r
f
/dt)
/dt)
(*)
on
off
CC
Undervoltage shut-down
Overvoltage shut-down
Current limitation
Thermal shut-down
temperature
Output turn-off clamp voltage
External MOSFET saturation
voltage detection threshold
Operating supply voltage
On state resistance
Supply current
Gate output voltage
Gate output clamp voltage
Turn-on delay time
Turn-off delay time
Output voltage rise time
Output voltage fall time
Turn-on voltage slope
Turn-off voltage slope
V
V
V
V
External MOSFET turn-on
dead time
Thermal resistance junction-case (per channel)
Thermal resistance junction-ambient
=13V, R
gs
gs
gs
gs
Turn-on delay time
Turn-off delay time
rise time
fall time
Parameter
Parameter
Parameter
LOAD
=1.1 )
Parameter
CC
=9V up to 18V; -40
Input rise time < 1 s (see fig. 1)
C1=4.7nF
Break to ground configuration
(see fig. 2)
(see fig. 3)
V
I
I
I
ON state
OFF state
I
LOAD
LOAD
LOAD
gs
IN
=-1 mA
= 3.25 V
=12A, L=6mH
=12A
=12A; Tj=25
Test Conditions
Test Conditions
Test Conditions
o
C
°
C<T
(MAX)
(MAX)
j
<150
°
C; unless otherwise specified)
V
150
CC
Min
Min
Min
150
2.5
5.5
5.0
6.0
36
30
-55
Value
Typ
160
230
600
Typ
Typ
170
0.5
2.6
1.0
2.2
6.8
4.2
1.4
50
45
50
40
43
45
26
50
V
1200
1800
Max
Max
CC
Max
150
135
150
120
500
200
5.0
5.5
5.5
VND670SP
8.5
8.0
10
10
50
30
36
15
40
2
-41
V ms
V ms
°C/W
°C/W
Unit
Unit
Unit
Unit
m
m
m
°C
V
V
A
V
V
V
V
V
A
s
s
s
s
s
s
s
s
s
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