SQ2360EES Vishay, SQ2360EES Datasheet - Page 4

• Manufacturer Part Number: SQ2360EES
• Description: N-channel 60 V D-s 175 ?c Mosfet
• Manufacturer: Vishay

SQ2360EES
Vishay Siliconix
TYPICAL CHARACTERISTICS T
www.vishay.com
4
2.5
2.1
1.7
1.3
0.9
0.5
0.5
0.4
0.3
0.2
0.1
0.0
- 50
0
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-Source Voltage
I
- 25
D
= 1.5 A
2
V
0
T
GS
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
4
50
75
6
A
V
100
= 25 °C, unless otherwise noted
GS
80
76
72
68
64
60
Drain-Source Breakdown vs. Junction Temperature
= 10 V
- 50
T
T
125
J
J
= 125 °C
= 25 °C
8
- 25
I
150
D
= 1 mA
175
10
0
T
J
- Junction Temperature (°C)
25
50
75
100
0.001
- 0.4
- 0.7
- 1.0
- 0.1
0.01
0.5
0.2
0.1
10
1
- 50
0.0
125
T
J
- 25
= 150 °C
150
Source-Drain Diode Forward Voltage
0.3
V
0
175
SD
- Source-to-Drain Voltage (V)
Threshold Voltage
T
25
J
- Temperature (°C)
0.6
50
I
D
S09-2672-Rev. B, 21-Dec-09
= 250 µA
T
75
J
Document Number: 65352
0.9
= 25 °C
100
125
1.2
I
D
= 5 mA
150
175
1.5