SQ2360EES Vishay, SQ2360EES Datasheet

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SQ2360EES

Manufacturer Part Number
SQ2360EES
Description
N-channel 60 V D-s 175 ?c Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SQ2360EES-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SQ2360EES-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
Document Number: 65352
S09-2672-Rev. B, 21-Dec-09
PRODUCT SUMMARY
V
R
R
I
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
D
DS
DS(on)
DS(on)
(A)
(V)
G
S
(Ω) at V
(Ω) at V
1
2
SQ2360EES (A8)*
* Marking Code
(SOT-23)
Top View
TO-236
GS
GS
= 10 V
= 4.5 V
b
3
a
D
b
N-Channel 60 V (D-S) 175 °C MOSFET
G
a
Single
N-Channel MOSFET
0.066
0.090
C
2.3
60
= 25 °C, unless otherwise noted
PCB Mount
L = 0.1 mH
T
Automotive
S
D
T
T
T
C
C
C
A
= 125 °C
= 25 °C
= 25 °C
= 25 °C
c
SOT-23
SQ2360EES-T1-GE3
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
• AEC-Q101 Qualified
• Typical ESD Protection 800 V
• Find out more about Vishay’s Automotive
Definition
Grade
www.vishay.com/applications
SYMBOL
SYMBOL
T
R
R
J
V
V
E
I
I
P
, T
DM
thJA
thJF
I
I
AS
DS
GS
D
S
AS
D
stg
®
Product
Power MOSFET
d
- 55 to + 175
LIMIT
LIMIT
± 20
1.66
115
2.3
1.4
1.8
1.1
1.4
60
30
75
Requirements
6
Vishay Siliconix
SQ2360EES
www.vishay.com
at:
UNIT
UNIT
°C/W
mJ
°C
W
A
V
1

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SQ2360EES Summary of contents

Page 1

... GS I (A) D Configuration TO-236 (SOT-23 Top View SQ2360EES (A8)* * Marking Code ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS T PARAMETER Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current Continuous Source Current (Diode Conduction) b Pulsed Drain Current Single Pulse Avalanche Current ...

Page 2

... SQ2360EES Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... S09-2672-Rev. B, 21-Dec- °C, unless otherwise noted ° ° 125 °C C 1.6 2.0 SQ2360EES Vishay Siliconix - 150 ° ° - Gate-to-Source Voltage (V) GS Gate Current vs. Gate-Source Voltage ...

Page 4

... SQ2360EES Vishay Siliconix TYPICAL CHARACTERISTICS 2.1 1.7 1.3 0.9 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 0.5 0.4 0.3 0.2 0.1 0 Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-Source Voltage www.vishay.com °C, unless otherwise noted 0.01 0.001 100 125 150 175 - 0 125 ° 0 ° ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65352. Document Number: 65352 S09-2672-Rev. B, 21-Dec- Square Wave Pulse Duration (s) SQ2360EES Vishay Siliconix 10 100 500 www.vishay.com 5 ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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