MCTV35P60F1D Intersil Corporation, MCTV35P60F1D Datasheet - Page 2

• Manufacturer Part Number: MCTV35P60F1D
• Description: 35a, 600v P-type Mos Controlled Thyristor Mct With Anti-parallel Diode
• Manufacturer: Intersil Corporation

Typical Performance Curves
Electrical Specifications
FIGURE 1. CATHODE CURRENT vs SATURATION VOLTAGE
Peak Off-State
Blocking Current
On-State Voltage
Gate-Anode
Leakage Current
Input Capacitance
Current Turn-On
Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-Off Energy
Thermal Resistance (MCT)
Thermal Resistance (Diode)
Diode Forward Voltage
Diode Reverse Recovery Time
100
50
30
20
10
5
3
2
1
0
PULSE TEST
PULSE DURATION = 250 s
DUTY CYCLE < 2%
PARAMETER
T
J
= +150
(TYPICAL)
o
0.5
C
V
TM
, CATHODE VOLTAGE (V)
1.0
T
SYMBOL
C
t
t
D(OFF)I
D(ON)I
E
I
R
R
= +25
I
C
V
V
DRM
t
GAS
t
t
OFF
RR
ISS
RI
TM
FI
KA
JC
JC
Specifications MCTV35P60F1D
o
C, Unless Otherwise Specified
1.5
V
V
I
V
V
V
V
L = 200 H, I
R
T
V
I
I
K
KA
KA
T
J
KA
GA
GA
GA
KA
GA
KA
G
T
J
= I
= +125
J
= +25
= 35A
= 35A, di/dt = 100A/ s
= 1 , V
= -40
= -600V
= -20V, T
= -300V
= +18V
= -7V
= 20V
= +18V
K115
o
o
C
o
C
TEST CONDITIONS
C
GA
K
2.0
J
= I
= +18V, -7V
= +25
K115
2-9
o
C
100
FIGURE 2. MAXIMUM CONTINUOUS CATHODE CURRENT
80
60
40
20
0
20
T
T
T
T
C
C
C
C
= +150
= +25
= +150
= +25
PACKAGE LIMIT
40
o
o
C
C
o
o
C
C
60
T
C
, CASE TEMPERATURE (
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DIODE
80
MCT SWITCHING LIMIT
TYP
140
180
640
1.1
5.6
1.1
.6
5
-
-
-
-
-
-
-
100
120
MAX
1.35
MCT
o
200
100
600
1.4
1.4
1.2
1.4
.7
C)
5
-
-
-
-
-
T
J
140
= +150
UNITS
o
o
mA
C/W
C/W
mJ
nA
nF
ns
ns
ns
ns
V
V
V
A
s
o
160
C