MCTV35P60F1D Intersil Corporation, MCTV35P60F1D Datasheet
MCTV35P60F1D
Manufacturer Part Number
MCTV35P60F1D
Description
35a, 600v P-type Mos Controlled Thyristor Mct With Anti-parallel Diode
Manufacturer
Intersil Corporation
Datasheet
1.MCTV35P60F1D.pdf
(5 pages)
April 1999
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Features
• 35A, -600V
• V
• 800A Surge Current Capability
• 800A/ s di/dt Capability
• MOS Insulated Gate Control
• 50A Gate Turn-Off Capability at +150
• Anti-Parallel Diode
Description
The MCT is an MOS Controlled Thyristor designed for switch-
ing currents on and off by negative and positive pulsed control
of an insulated MOS gate. It is designed for use in motor con-
trols, inverters, line switches and other power switching appli-
cations. The MCT is especially suited for resonant (zero
voltage or zero current switching) applications. The SCR like
forward drop greatly reduces conduction power loss.
MCTs allow the control of high power circuits with very small
amounts of input energy. They feature the high peak current
capability common to SCR type thyristors, and operate at
junction temperatures up to +150
This device features a discrete anti-parallel diode that shunts
current around the MCT in the reverse direction without
introducing carriers into the depletion region.
NOTE: When ordering, use the entire part number.
Formerly developmental type TA9789 (MCT) and TA49054
(diode).
MCTV35P60F1D
Absolute Maximum Ratings
Peak Off-State Voltage (See Figure 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Continuous Cathode Current (See Figure 2)
Non-repetitive Peak Cathode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Peak Controllable Current (See Figure 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate-Anode Voltage (Continuous) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate-Anode Voltage (Peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Rate of Change of Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . dv/dt
Rate of Change of Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .di/dt
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
NOTE: 1. Maximum Pulse Width of 250 s (Half Sine) Assume T
PART NUMBER
T
T
(0.063" (1.6mm) from case for 10s)
TM
C
C
©
= +25
= +90
= -1.35V (Max) at I = 35A and +150
Harris Corporation 1999
Semiconductor
o
o
C (Package Limited) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
PART NUMBER INFORMATION
TO-247
PACKAGE
o
T
C with active switching.
C
= +25
M35P60F1D
o
C
o
o
C
C, Unless Otherwise Specified
BRAND
MCTV35P60F1D
J
2-8
Thyristor (MCT) with Anti-Parallel Diode
(Initial) = +90
Package
Symbol
35A, 600V P-Type MOS Controlled
o
C and T
J
(Final) = T
JEDEC STYLE TO-247
J
, T
DRM
K115
GAM
KSM
GA1
STG
K25
KC
G
T
L
MCTV35P60F1D
J
See Figure 11
(Max) = +150
-55 to +150
A
K
-600
1.43
800
800
178
260
60
35
50
20
25
A
File Number
A
o
C
K
GR
G
UNITS
W/
A/ s
o
o
W
V
A
A
A
A
V
V
C
C
o
C
3694.4
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MCTV35P60F1D Summary of contents
Page 1
... Symbol C with active switching. BRAND M35P60F1D +25 C, Unless Otherwise Specifi (Initial) = +90 C and T J 2-8 JEDEC STYLE TO-247 MCTV35P60F1D UNITS -600 V DRM 60 A K25 35 A K115 800 A KSM GA1 25 V GAM See Figure 11 ...
Page 2
... PULSE DURATION = 250 s 50 DUTY CYCLE < +150 0.5 1 CATHODE VOLTAGE (V) TM FIGURE 1. CATHODE CURRENT vs SATURATION VOLTAGE (TYPICAL) Specifications MCTV35P60F1D o C, Unless Otherwise Specified TEST CONDITIONS V = -600V T = +150 +18V +150 K K115 ...
Page 3
... V = -300V -200V CATHODE CURRENT (A) K FIGURE 7. TURN-ON ENERGY LOSS vs CATHODE CURRENT (TYPICAL) MCTV35P60F1D (Continued 200 H G 1100 1000 900 800 700 = -300V 600 500 400 FIGURE 4. TURN-OFF DELAY vs CATHODE CURRENT (TYPICAL) ...
Page 4
... DUTY CYCLE < +150 + 0 ANODE-CATHODE VOLTAGE (V) AK FIGURE 13. DIODE CATHODE-ANODE CURRENT vs VOLTAGE (TYPICAL) MCTV35P60F1D (Continued + 200 100 FIGURE 10. TURN-OFF CAPABILITY vs ANODE-CATHODE o 200 T = +150 18V ...
Page 5
... D(ON)I the leading edge of the input pulse and the point where the cathode current rises to 10% of its maximum value defined as the 90% point of the trailing edge of the input pulse and the point where the cathode current falls to 90% of MCTV35P60F1D - 500 + - 20V ...