MCTA75P60E1 Intersil Corporation, MCTA75P60E1 Datasheet - Page 5

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MCTA75P60E1

Manufacturer Part Number
MCTA75P60E1
Description
75a, 600v P-type Mos Controlled Thyristor Mct
Manufacturer
Intersil Corporation
Datasheet
Test Circuits
Handling Precautions for MCT's
MOS Controlled Thyristors are susceptible to gate-insula-
tion damage by the electrostatic discharge of energy through
the devices. When handling these devices, care should be
exercised to assure that the static charge built in the han-
dler's body capacitance is not discharged through the
device. MCT's can be handled safely if the following basic
precautions are taken:
1. Prior to assembly into a circuit, all leads should be kept
2. When devices are removed by hand from their carriers,
3. Tips of soldering irons should be grounded.
-V
I K
V
KA
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
G
*
“ECCOSORB LD26” or equivalent.
FIGURE 15. SWITCHING TEST WAVEFORMS
DUT
MAXIMUM RISE AND FALL TIME OF V
200 H
FIGURE 13. SWITCHING TEST CIRCUIT
I
K
t
D(OFF) I
90%
10%
V
K
t
F I
RURG8060
10%
90%
MCTV75P60E1, MCTA75P60E1
G
t
IS 200ns
D(ON) I
t
R I
+
-
2-22
4. Devices should never be inserted into or removed from cir-
5. Gate Voltage Rating - Never exceed the gate-voltage
6. Gate Termination - The gates of these devices are essen-
7. Gate Protection - These devices do not have an internal
† Trademark Emerson and Cumming, Inc.
cuits with power on.
rating of V
permanent damage to the oxide layer in the gate region.
tially capacitors. Circuits that leave the gate open-circuited
or floating should be avoided. These conditions can result
in turn-on of the device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
monolithic zener diode from gate to emitter. If gate protec-
tion is required an external zener is recommended.
+
-
20V
500
V
V
AK
I
G
K
FIGURE 16. V
10k
FIGURE 14. V
GA
. Exceeding the rated V
di/dt
C
S
V
V
V
G
A
SPIKE
SPIKE
DUT
SPIKE
TEST WAVEFORMS
TEST CIRCUIT
V
I
9V
4.7k
K
TM
-
GA
can result in
+
-

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