MCTA75P60E1 Intersil Corporation, MCTA75P60E1 Datasheet - Page 4

• Manufacturer Part Number: MCTA75P60E1
• Description: 75a, 600v P-type Mos Controlled Thyristor Mct
• Manufacturer: Intersil Corporation

Typical Performance Curves
Operating Frequency Information
Operating frequency information for a typical device
(Figure 9) is presented as a guide for estimating device per-
formance for a specific application. Other typical frequency
vs cathode current (I
tion shown for a typical unit in Figures 3 to 8. The operating
frequency plot (Figure 9) of a typical device shows f
f
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
f
t
10% of the on-state time for a 50% duty factor. Other definitions
are possible. t
edge of the input pulse and the point where the cathode current
rises to 10% of its maximum value. t
90% point of the trailing edge of the input pulse and the point
where the cathode current falls to 90% of its maximum value.
Device delay can establish an additional frequency limiting condi-
MAX1
D(OFF)I
MAX2
FIGURE 9. OPERATING FREQUENCY vs CATHODE CURRENT
-725
-700
-675
-650
-625
-600
-575
-550
-525
-500
-475
-450
-425
100
10
is defined by f
whichever is smaller at each point. The information is
1
0.1
10
deadtime (the denominator) has been arbitrarily held to
FIGURE 11. BLOCKING VOLTAGE vs dv/dt
f
f
P
P
(P
R
V
MAX1
MAX2
D
C
KA
C
JC
: ALLOWABLE DISSIPATION
: CONDUCTION DISSIPATION
(TYPICAL)
DUTY FACTOR = 50%)
D(ON)I
= -300V
= 0.5
= 0.05(t
= (P
1.0
D
o
C/W
- P
MAX1
is defined as the 10% point of the leading
AK
D(ON) I
I
C
K
) / E
) plots are possible using the informa-
, CATHODE CURRENT (A)
= 0.05 / (t
SWITCH
+ t
10.0
D(OFF) I
dv/dt (V/ s)
)
D(ON)I
100.0
D(OFF)I
V
T
MCTV75P60E1, MCTA75P60E1
E
E
KA
J
+ t
(Continued)
ON
ON
= +150
= -200V
D(OFF)I
is defined as the
= t
100
1000.0
0, t
D(ON) I
o
C, V
D(ON) I
). t
GA
= 0
MAX1
D(ON)I
10000.0
= 18V
0
200
or
+
2-21
tion for an application other than T
when controlling output ripple under a lightly loaded condition.
f
allowable dissipation (P
R
must not exceed P
and the conduction losses (P
(V
the instantaneous power loss starting at the leading edge of
the input pulse and ending at the point where the anode-
cathode voltage equals saturation voltage (V
is defined as the sum of the instantaneous power loss start-
ing at the trailing edge of the input pulse and ending at the
point where the cathode current equals zero (I
The switching power loss (Figure 10) is defined as f
+ E
enced by external circuit conditions and components, f
curves are plotted both including and neglecting turn-on losses.
FIGURE 10. TURN-OFF CAPABILITY vs ANODE-CATHODE
MAX2
AK
150
140
130
120
110
100
JC
-200
-100
OFF
90
80
70
60
50
40
30
20
10
-10
0
-1
. The sum of device switching and conduction losses
• I
0
is defined by f
). Because Turn-on switching losses can be greatly influ-
FIGURE 12. SPIKE VOLTAGE vs di/dt (TYPICAL)
1
AK
C
C
C
S
S
S
-50
) / (duty factor/100). E
= 0.1 F, T
= 0.1 F, T
= 1 F, T
6
VOLTAGE
SAFE OPERATING AREA
J
11
-150
V
J
= +150
D
J
KA
= +150
TURN-OFF
. A 50% duty factor was used (Figure 10)
= +25
MAX2
, PEAK TURN OFF VOLTAGE (V)
16
o
C
D
o
o
C
C
) is defined by P
-250
= (P
21
di/dt (A/ s)
C
T
D
) are approximated by P
J
ON
26
= +150
- P
JMAX
-350
is defined as the sum of
C
) / (E
31
o
. t
C, V
C
C
C
S
S
S
D(OFF)I
D
= 2 F, T
= 1 F, T
= 2 F, T
GA
ON
-450
36
= (T
AK
= 18V, L = 200 H
K
+ E
= V
= 0).
JMAX
41
is important
MAX2
J
J
J
= +150
= +25
= +25
OFF
TM
-550
). E
- T
46
). The
• (E
o
o
C
C
o
MAX
C
C
OFF
C
ON
) /
=