BSX32 NXP Semiconductors, BSX32 Datasheet - Page 4

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BSX32

Manufacturer Part Number
BSX32
Description
Npn Switching Transistor
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
1997 May 28
SYMBOL
I
I
h
h
h
V
V
C
C
f
Switching times (between 10% and 90% levels)
t
t
amb
CBO
EBO
T
on
off
FE
FE
FE
CEsat
BEsat
NPN switching transistor
c
e
= 25 C unless otherwise specified.
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
turn-on time
turn-off time
p
300 s;
PARAMETER
0.01.
I
I
V
I
V
I
I
I
I
I
I
I
I
I
I
I
E
E
C
C
C
C
C
C
C
E
C
C
Con
Boff
CE
CE
I
I
I
I
I
= 0; V
= 0; V
= 1 A; V
= 100 mA; I
= 500 mA; I
= 1 A; I
= 100 mA; I
= 500 mA; I
= 1 A; I
= i
= i
= 50 mA; V
C
C
C
C
C
= 50 mA
= 500 mA; I
= 1 V; note 1
= 1 V; T
= 10 mA
= 100 mA
= 500 mA
= 100 mA
= 500 mA
e
c
= 0; V
= 0; V
CB
EB
4
B
B
CE
= 4 V
= 50 V
= 100 mA; note 1
= 100 mA; note 1
CONDITIONS
amb
CB
EB
= 5 V; note 1
CE
B
B
B
B
= 500 mV; f = 1 MHz
= 10 V; f = 1 MHz
= 10 mA; note 1
= 50 mA; note 1
= 10 mA; note 1
= 50 mA; note 1
Bon
= 55 C; note 1
= 10 V; f = 100 MHz
= 50 mA;
30
60
25
20
30
15
300
MIN.
60
60
170
360
600
800
TYP.
Product specification
4
300
150
250
500
850
900
1.5
2
10
55
35
60
MAX. UNIT
BSX32
nA
mV
mV
mV
mV
V
V
pF
pF
MHz
ns
ns
A

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