TSM9N50 Taiwan Semiconductor Company, Ltd. (TSC), TSM9N50 Datasheet - Page 2

• Manufacturer Part Number: TSM9N50
• Description: 500v N-channel Power Mosfet
• Manufacturer: Taiwan Semiconductor Company, Ltd. (TSC)

Electrical Specifications
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. V
3. Pulse test: pulse width ≤300uS, duty cycle ≤2%
4. Essentially Independent of Operating Temperature
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transfer Conductance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source Drain Diode
Source-drain Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
DD
= 50V, I
b
c
AS
=9A, L=5.7mH, R
(Ta = 25
G
=9.1Ω, Starting T
o
C unless otherwise noted)
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
R
I
V
dI
S
GS
GS
DS
DS
GS
DS
DS
GS
DS
DD
GS
G
F
= 9A, V
/dt = 100A/us
= 9.1Ω
= 0V, I
= 10V, I
= V
= 500V, V
= 50V, I
= 400V, I
= 10V
= 25V, V
= 250V, I
= 0V, I
= ±30V, V
Conditions
GS
GS
, I
D
S
Preliminary
D
D
D
= 250uA
= 9A,
= 0V
GS
J
= 250uA
D
D
= 4.8A
= 4.8A
=25ºC
GS
DS
= 9A,
= 9A,
= 0V,
= 0V
= 0V
2/7
500V N-Channel Power MOSFET
Symbol
R
V
BV
C
t
t
I
I
DS(ON)
GS(TH)
Q
C
C
V
Q
d(on)
d(off)
Q
I
Q
DSS
GSS
g
SD
t
t
t
oss
rss
SD
fr
DSS
iss
fs
gs
gd
r
f
g
fr
Min
500
2.0
5.9
--
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--
--
--
--
--
--
--
--
--
--
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--
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--
1300
Typ
0.75
120
460
9.3
310
4.2
63
32
14
23
49
20
--
--
--
--
--
--
--
TSM9N50
Version: Preliminary
±100
Max
0.85
4.0
970
25
2.0
8.9
--
--
--
--
--
--
--
--
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9
Unit
uA
nA
nC
nS
nS
uC
pF
Ω
V
V
S
A
V