TSM7N65 Taiwan Semiconductor Company, Ltd. (TSC), TSM7N65 Datasheet - Page 2

• Manufacturer Part Number: TSM7N65
• Description: 650v N-channel Power Mosfet
• Manufacturer: Taiwan Semiconductor Company, Ltd. (TSC)

Thermal Performance
Notes: Surface mounted on FR4 board t ≤ 10sec
Electrical Specifications
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. V
3. Pulse test: pulse width ≤300uS, duty cycle ≤2%
4. Essentially Independent of Operating Temperature
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transfer Conductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
DD
= 50V, I
b
c
AS
=3.6A, L=30mH, V
(Ta = 25
DS
=500V
o
C unless otherwise noted)
V
V
V
V
V
T
V
V
I
V
V
V
f = 1.0MHz
V
V
V
dI
S
C
GS
GS
DS
DS
DS
GS
DS
DS
GS
DS
GS
DD
GS
F
= 6A, V
=125ºC
/dt = 100A/us
= V
= 650V, V
= 650V, V
= 8V, I
= 300V, I
= 25V, V
= 0V, I
= 10V, I
= 10V
= 10V, I
= 300V, R
= 0V, I
= ±20V, V
Conditions
GS
, I
GS
TO-220
ITO-220
D
D
S
D
D
D
= 1A
= 6A,
= 250uA
= 0V
GS
= 250uA
D
= 3A
= 6A,
GS
GS
G
DS
= 6A,
= 0V,
= 25Ω
2/9
= 0V
= 0V,
= 0V
650V N-Channel Power MOSFET
Symbol
Symbol
R
V
BV
RӨ
RӨ
C
t
t
I
I
DS(ON)
GS(TH)
V
Q
C
C
Q
d(on)
d(off)
Q
DSS
GSS
g
Q
t
t
t
oss
SD
rss
iss
fr
DSS
fs
gs
gd
r
f
g
fr
JA
JC
Min
650
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Limit
62.5
1.0
4.2
Typ
905
115
638
1.0
3.7
4.8
32
11
25
14
14
47
19
--
--
--
--
--
--
6
TSM7N65
Max
±10
1.2
4.0
1.6
50
46
--
--
1
--
--
--
--
--
--
--
--
--
--
--
Version: A09
o
o
Unit
C/W
C/W
Unit
uA
uA
nC
uC
pF
nS
nS
V
Ω
V
S
V