6MBI10S-120 Fuji Electric holdings CO.,Ltd, 6MBI10S-120 Datasheet - Page 3

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6MBI10S-120

Manufacturer Part Number
6MBI10S-120
Description
Igbt Module S Series 1200v / 10a 6 In One-package
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet

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6MBI10S-120
1000
5000
1000
500
100
500
100
50
50
8
6
4
2
0
50
50
0
toff
ton
tr
tf
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=10A, VGE=±15V, Tj= 25°C
Vcc=600V, Ic=10A, VGE=±15V, Tj= 125°C
Switching time vs. Collector current (typ.)
Vcc=600V,V
100
Switching loss vs. Gate resistance (typ.)
100
5
Gate resistance : Rg [
Gate resistance : Rg [
Collector current : Ic [ A ]
GE=
±15V, Rg=120 ,Tj=25
10
500
500
]
]
15
o
C
1000
1000
ton
toff
tr
tf
Eon
Eoff
Err
2000
2000
20
1000
500
100
50
25
20
15
10
3
2
1
0
5
0
0
0
0
toff
ton
tr
tf
200
Switching time vs. Collector current (typ.)
Vcc=600V,V
+VGE=15V, -VGE<15V, Rg>120 ,Tj<125
Switching loss vs. Collector current (typ.)
Vcc=600V,V
Reverse bias safe operating area
Collector - Emitter voltage : VCE [ V ]
5
5
400
GE=
Collector current : Ic [ A ]
Collector current : Ic [ A ]
GE=
±15V, Rg=120 ,Tj=125
=
600
±15V, Rg=120 ,Tj=25
10
10
=
800
IGBT Modules
=
1000
o
15
15
C
o
o
Eoff(25
C
Eon(25
Eon(125
Eoff(125
Err(125
Err(25
C
1200
o
o
o
C)
C)
o
C)
C)
o
o
C)
C)
1400
20
20

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