6MBI10S-120 Fuji Electric holdings CO.,Ltd, 6MBI10S-120 Datasheet - Page 2

• Manufacturer Part Number: 6MBI10S-120
• Description: Igbt Module S Series 1200v / 10a 6 In One-package
• Manufacturer: Fuji Electric holdings CO.,Ltd

6MBI10S-120
Characteristics
5000
1000
500
100
25
20
15
10
25
20
15
10
50
5
0
5
0
0
0
0
Capacitance vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage
5
Collector current vs. Collector-Emitter voltage
1
1
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
VGE=0V, f= 1MHz, Tj= 25
10
VGE=15V (typ.)
Tj= 25
2
2
15
VGE= 20V
o
C (typ.)
Tj= 25
20
3
3
o
C
15V
o
25
C
12V
Tj= 125
4
4
o
30
C
Cres
Cies
Coes
10V
8V
35
5
5
1000
800
600
400
200
25
20
15
10
10
5
0
8
6
4
2
0
0
0
5
0
Collector-Emitter voltage vs. Gate-Emitter voltage
Collector current vs. Collector-Emitter voltage
20
1
Collector - Emitter voltage : VCE [ V ]
10
Gate - Emitter voltage : VGE [ V ]
Vcc=600V, Ic=10A, Tj= 25
Dynamic Gate charge (typ.)
Gate charge : Qg [ nC ]
Tj= 125
Tj= 25
40
2
o
15
C (typ.)
o
C (typ.)
60
3
VGE= 20V
o
C
IGBT Modules
20
Ic= 10A
Ic= 20A
Ic= 5A
80
4
15V
12V
10V
8V
100
25
5
25
20
15
10
5
0