NTNKE4891N ON Semiconductor, NTNKE4891N Datasheet - Page 4

• Manufacturer Part Number: NTNKE4891N
• Description: Ntmke4891n Power Mosfet
• Manufacturer: ON Semiconductor

1000
1000
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
0.01
100
100
500
0.1
10
10
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
0.01
1
1
0
0
1
Figure 9. Resistive Switching Time Variation
V
I
V
t
0 ≤ V
Single Pulse
T
Figure 11. Maximum Rated Forward Biased
C
D
d(off)
DD
GS
C
rss
= 23 A
t
t
f
= 25°C
r
= 15 V
= 4.5 V
GS
V
5
DS
Figure 7. Capacitance Variation
≤ 20 V
, DRAIN−TO−SOURCE VOLTAGE (V)
C
C
0.1
R
Thermal Limit
Package Limit
R
iss
oss
DS(on)
G
Safe Operating Area
vs. Gate Resistance
, GATE RESISTANCE (W)
10
Limit
15
10
1
20
TYPICAL CHARACTERISTICS
10
V
T
J
GS
25
= 25°C
http://onsemi.com
100 ms
10 ms
= 0 V
t
10 ms
1 ms
d(on)
dc
100
100
30
4
200
180
160
140
120
100
20
15
10
80
60
40
20
12
10
5
0
0
8
6
4
2
0
0.1
25
0
Figure 10. Diode Forward Voltage vs. Current
V
T
Q
Figure 12. Maximum Avalanche Energy vs.
Drain−to−Source Voltage vs. Total Charge
J
GS
T
gs
= 25°C
0.2
J
, STARTING JUNCTION TEMPERATURE(°C)
10
= 0 V
V
SD
50
Starting Junction Temperature
Figure 8. Gate−to−Source and
, SOURCE−TO−DRAIN VOLTAGE (V)
Q
Q
0.3
g
gd
, TOTAL GATE CHARGE (nC)
20
0.4
75
30
QT
0.5
40
100
0.6
50
0.7
T
V
V
I
D
125
J
DD
GS
I
= 23 A
= 25°C
D
= 15 V
= 10 V
= 35 A
60
0.8
150
0.9
70