NTNKE4891N ON Semiconductor, NTNKE4891N Datasheet - Page 3

• Manufacturer Part Number: NTNKE4891N
• Description: Ntmke4891n Power Mosfet
• Manufacturer: ON Semiconductor

0.0060
0.0055
0.0050
0.0045
0.0040
0.0035
0.0030
0.0025
0.0020
0.0015
0.0010
140
120
100
80
60
40
20
0
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0
−50
3
Figure 3. On−Resistance vs. Gate−to−Source
0.5
I
V
D
Figure 5. On−Resistance Variation with
GS
Figure 1. On−Region Characteristics
= 29 A
−25
V
= 10 V
DS
4
V
1
GS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
, GATE−TO−SOURCE VOLTAGE (V)
3.8 V
, JUNCTION TEMPERATURE (°C)
4.5 V − 4.2 V
1.5
0
10 V − 6.5 V
5
Temperature
2
25
Voltage
6
2.5
50
3
7
75
3.5
TYPICAL CHARACTERISTICS
8
100
4
T
I
T
D
J
J
= 25°C
= 29 A
= 25°C
http://onsemi.com
4.5
9
3.4 V
3.2 V
2.8 V
125
3.6 V
3.0 V
5
10
150
3
1.0E−10
1.0E−5
1.0E−6
1.0E−7
1.0E−8
1.0E−9
0.0050
0.0040
0.0030
0.0020
0.0010
200
180
160
140
120
100
80
60
40
20
0
1
0
5
Figure 4. On−Resistance vs. Drain Current and
V
T
Figure 6. Drain−to−Source Leakage Current
V
DS
J
GS
20
= 25°C
1.5
≥ 10 V
= 0 V
V
V
Figure 2. Transfer Characteristics
DS
GS
40
T
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
J
10
2
= 25°C
I
60
D
T
, DRAIN CURRENT (A)
J
2.5
= 125°C
Gate Voltage
80
vs. Voltage
V
V
GS
GS
T
T
T
J
J
J
100
= 4.5 V
= 10 V
= 25°C
15
= 150°C
= 125°C
3
T
120
J
= −55°C
3.5
140
20
4
160
4.5
180
200
25
5