FRAF1001G Taiwan Semiconductor Company, Ltd. (TSC), FRAF1001G Datasheet - Page 2

• Manufacturer Part Number: FRAF1001G
• Description: Isolated 10 Amps. Glass Passivated Fast Recovery Rectifiers
• Manufacturer: Taiwan Semiconductor Company, Ltd. (TSC)

150
125
100
300
250
200
150
100
10
75
50
25
50
8
6
4
2
0
0
0
0.1
0
1
FIG.4- TYPICAL JUNCTION CAPACITANCE
FIG.1- MAXIMUM FORWARD CURRENT DERATING
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
RATINGS AND CHARACTERISTIC CURVES (FRAF1001G THRU FRAF1007G)
CURVE
SURGE CURRENT
0.5
2
1
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
NONINDUCTIVE
CASE TEMPERATURE. ( C)
5
NUMBER OF CYCLES AT 60Hz
(+)
50Vdc
(approx)
(-)
0
REVERSE VOLTAGE. (V)
NOTES: 1. Rise Time=7ns max. Input Impedance=
5
5
2. Rise Time=10ns max. Sourse Impedance=
10
10
1 megohm 22pf
50 ohms
NON
INDUCTIVE
DUT
10
NONINDUCTIVE
8.3ms Single Half Sine Wave
JEDEC Method
TJ=125 C
1
o
50
20
0
0
OSCILLOSCOPE
(NOTE 1)
0
100
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
50
0
500 1000
1
PULSE
GENERATOR
(NOTE 2)
5
100
0
(-)
(+)
+0.5A
-0.25A
-1.0A
0
100
200
400
100
0.1
0.4
0.2
0.4
0.2
0.1
10
40
40
20
10
4
2
1
4
2
1
0.6
FIG.2- TYPICAL REVERSE CHARACTERISTICS
0
FIG.5- TYPICAL INSTANTANEOUS
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
trr
20
0.8
1cm
FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD VOLTAGE. (V)
SET TIME BASE FOR
5/ 10ns/ cm
40
1.0
Tj=75 C
Tj=125 C
0
1.2
60
Tj=25 C
0
0
80
1.4
Tj=25 C
Pulse Width=300 s
1% Duty Cycle
100
Version: A06
1.6
o
120
1.8
140
2.0