PHE13005 NXP Semiconductors, PHE13005 Datasheet - Page 5

• Manufacturer Part Number: PHE13005
• Description: Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
February 1999
Silicon Diffused Power Transistor
Fig.13. Test Circuit for reverse bias safe operating
Fig.14. Reverse bias safe operating area T
V
cl
9
8
7
6
5
4
3
2
1
0
IC (A)
-VBB
IBon
0
1000V; V
100
200
cc
= 150V; V
300
VCEclamp (V)
VBE=-5V
LB
200 H
400
area.
500
BE
= -5V; L
LC
600
VCC
700
B
T.U.T.
= 1 H; L
800
VCL
j
900
T
c
jmax
=
5
Fig.15. Forward bias safe operating area. T
Icm max
(1)
(2)
I
II
III
NB:
Ic max
IC (A)
0.001
0.01
100
0.1
10
1
1
P
Second breakdown limits.
Region of permissible DC operation.
Extension for repetitive pulse operation.
Extension during turn-on in single
transistor converters provided that
R
Mounted with heatsink compound and
30
envelope.
tot
BE
max and P
5 newton force on the centre of the
100
10
VCEclamp (V)
I
and t
Duty Cycle = 0.01
(1)
tot
peak max lines.
p
100
0.6 s.
Product specification
(2)
II
PHE13005
III
1,000
hs
Rev 1.000
20us
50us
100us
200us
500us
tp =
DC
25 ˚C