BUJ106A NXP Semiconductors, BUJ106A Datasheet - Page 4

• Manufacturer Part Number: BUJ106A
• Description: Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
March 1999
Silicon Diffused Power Transistor
Solid lines = typ values, V
120
110
100
HFE
VCEsat/V
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
Fig.9. Collector-Emitter saturation voltage.
50
30
20
15
10
90
80
70
60
50
40
30
20
10
Fig.8. Typical DC current gain. h
5
2
2
1
0
0.01
0
0.01
Fig.7. Normalised power dissipation.
0
PD%
PD% = 100 PD/PD
20
0.05
40
parameter V
0.1
0.1
60
VCE = 1V
0.3
Tmb / C
IC/A
IB/A
80
CEsat
Normalised Power Derating
25˚C
CE
1
= f(IB); T
100
VCE = 5V
1
= f (T
1A
2
120
mb
FE
3A
2A
)
= f(I
5
j
=25˚C.
4A
140
8
C
)
12
10
4
Solid lines = typ values, V
Solid lines = typ values, V
Fig.11. Collector-Emitter saturation voltage.
0.01
VBEsat/V
VCEsat/V
1.4
1.2
0.8
0.6
0.4
0.2
0.25
0.15
0.05
0.1
0.3
0.2
0.1
1
0
10
Fig.10. Base-Emitter saturation voltage.
0.1
1E-06
0
1
Fig.12. Transient thermal impedance.
0.1
Zth / (K/W)
D=
0.05
0.02
Z
0.5
0.2
0.1
th j-mb
0
= f(t); parameter D = t
1E-04
IC/A
IC/A
1
t / s
1
BEsat
CEsat
P
D
1E-02
= f(IC); at IC/IB =5.
= f(IC); at IC/IB =5.
Product specification
t p
T
p
D =
/T
BUJ106A
1E+00
T
t
p
t
Rev 2.000
10
10