BUJ105AB NXP Semiconductors, BUJ105AB Datasheet - Page 4

• Manufacturer Part Number: BUJ105AB
• Description: Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
October 2001
Silicon Diffused Power Transistor
120
110
100
HFE
HFE
50
30
20
15
10
50
30
20
15
10
90
80
70
60
50
40
30
20
10
Fig.8. Typical DC current gain. h
Fig.9. Typical DC current gain. h
5
2
5
2
0.01
0.01
0
Fig.7. Normalised power dissipation.
0
PD%
VCE=5V
PD% = 100 PD/PD
VCE=1V
20
0.05
0.05
40
parameter V
parameter V
0.1
0.1
-40C
Tj=100C
Tj=100C
-40C
60
25C
Tmb / C
IC/A
IC/A
25C
0.3
0.3
80
Normalised Power Derating
25˚C
CE
CE
100
1
1
= f (T
2
2
120
FE
FE
mb
3
3
)
= f(I
= f(I
5
5
140
C
C
)
)
10
10
4
Solid lines = typ values, V
Solid lines = typ values, V
Solid lines = typ values, V
Fig.10. Collector-Emitter saturation voltage.
Fig.12. Collector-Emitter saturation voltage.
VBESAT/V
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0.6
0.5
VCESAT/V
0.6
0.5
0.4
0.3
0.2
0.1
2.0
1.6
1.2
0.8
0.4
0.0
1
0
Fig.11. Base-Emitter saturation voltage.
0.1
0.2
0.01
VCEsat/V
-40C
25C
0.4
IC=1A
0.10
0.6
0.5
2A
IB/A
3A
1
IC/A
IC/A
1
CEsat
BEsat
4A
CEsat
25C
1.00
Tj=100C
= f(IC); at IC/IB =4.
= f(IC); at IC/IB =4.
2
= f(IB); T
Product specification
2
Tj=100C
BUJ105AB
5
10.00
j
=25˚C.
-40C
Rev 1.000
5
10
6