BUJ101AU NXP Semiconductors, BUJ101AU Datasheet - Page 3

• Manufacturer Part Number: BUJ101AU
• Description: Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
September 1999
Silicon Diffused Power Transistor
120
110
100
30-60 Hz
250
IC / mA
90
80
70
60
50
40
30
20
10
100
10
0
0
Fig.2. Oscilloscope display for V
Fig.3. Normalised power dissipation.
0
PD%
PD% = 100 PD/PD
Fig.1. Test circuit for V
20
6V
40
300R
60
VCE / V
Tmb / C
80
Normalised Power Derating
25˚C
100
= f (T
CEOsust
Oscilloscope
1R
VCEOsust
100-200R
Horizontal
Vertical
min
120
mb
CEOsust
.
)
140
+ 50v
.
3
!
HFE
HFE
0.01
30
20
15
10
30
10
Fig.5. Typical DC current gain. h
Fig.6. Typical DC current gain. h
0.001
0.001
0.1
5
1
1
10
1
Fig.4. Transient thermal impedance.
Zth j-mb / (K/W)
125 C
25 C
Zth
D=
0.05
0.02
0.5
0.2
0.1
25 C
0
j-lead
0.01
0.01
10us
= f(t); parameter D = t
VCE = 1V
VCE = 5V
parameter V
parameter V
-40 C
IC/A
IC/A
1ms
t / s
0.1
-40 C
0.1
P
D
CE
CE
Product specification
125 C
t
p
T
0.1s
BUJ101AU
D =
FE
FE
1
1
p
/T
T
t
= f(I
= f(I
p
t
2
2
Rev 1.000
3
3
10ms
C
C
)
)
5
5